发明授权
- 专利标题： Semiconductor device and method of fabricating same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US08785486申请日： 1997-01-17
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公开(公告)号： US06528820B1公开(公告)日： 2003-03-04
- 发明人: Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
- 申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
- 优先权： JP8-026210 19960119; JP8-026037 19960120; JP8-032874 19960126; JP8-032875 19960126; JP8-032981 19960127; JP8-058334 19960220; JP8-088759 19960317; JP8-326068 19961121
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.
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