发明授权
- 专利标题: Random access memory integrated with CMOS sensors
- 专利标题(中): 与CMOS传感器集成的随机存取存储器
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申请号: US09442650申请日: 1999-11-18
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公开(公告)号: US06529240B2公开(公告)日: 2003-03-04
- 发明人: Charles M. C. Tan , Wayne M. Greene , Francis Joseph
- 申请人: Charles M. C. Tan , Wayne M. Greene , Francis Joseph
- 主分类号: H04N314
- IPC分类号: H04N314
摘要:
An imaging device includes a Gray Code generator and an array of pixels. Each pixel includes a complimentary metal oxide semiconductor (“CMOS”) sensor, a comparator and random access memory (e.g., ferroelectric random access memory). The Gray Code generator is started at the beginning of capture mode and begins providing a sequence of code words. Within each pixel, an output of a CMOS sensor is compared to a threshold, and a code word in the sequence is stored in random access memory when the sensor output crosses the threshold. Thus, the random access memory of each pixel stores a code word that represents the intensity of light detected by its associated CMOS sensor.
公开/授权文献
- US20020067417A1 RANDOM ACCESS MEMORY INTEGRATED WITH CMOS SENSORS 公开/授权日:2002-06-06
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