- 专利标题: Semiconductor light-emitting element
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申请号: US09994370申请日: 2001-11-27
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公开(公告)号: US06534795B2公开(公告)日: 2003-03-18
- 发明人: Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
- 申请人: Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
- 优先权: JP2000-364268 20001130; JP2001-321052 20011018
- 主分类号: H01L3112
- IPC分类号: H01L3112
摘要:
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.
公开/授权文献
- US20020104998A1 Semiconductor light-emitting element 公开/授权日:2002-08-08