公开(公告)号：USRE40485E1

公开(公告)日：2008-09-09

申请号：US11140524

申请日：2005-05-27

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： H01L33/325 ,  H01L33/08

摘要： In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

摘要翻译： 在半导体发光元件中，底层由AlN层构成，第一包层由n-AlGaN层构成。 发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。 然后，在基底层和/或岛状单晶部分中并入至少一种稀土金属元素。

公开(公告)号：US06707076B2

公开(公告)日：2004-03-16

申请号：US10370350

申请日：2003-02-18

申请人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01L29739

CPC分类号： H01L29/66318 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/66856

摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

公开(公告)号：US5871580A

公开(公告)日：1999-02-16

申请号：US669493

申请日：1996-07-11

申请人： Toshiaki Asahi ,  Osamu Oda ,  Kenji Sato

发明人： Toshiaki Asahi ,  Osamu Oda ,  Kenji Sato

IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B15/00 ,  C30B15/36 ,  C30B28/04

CPC分类号： C30B15/36 ,  C30B11/00 ,  C30B11/14 ,  C30B15/00 ,  C30B29/48

摘要： Using a thin plate seed crystal 10 having a different material from a bulk crystal to be grown and having a great diameter, before crystal growth is started, a temperature in the lower portion of a solution 12s in which material is solved into a solvent (or a melt 12m) is set to a higher temperature than the upper portion to cause convection so that the surface of seed crystal 10 is rinsed by the convection by keeping in the state for a predetermined period. Then, the crystal growth is started by the Bridgman method or gradient freezing method. In this case, a temperature gradient may be provided on the surface of seed crystal 10 by inclining the seed crystal 10 such that nucleation of crystal growth is generated at a position whose temperature is lowest on the surface of seed crystal 10 upon the start of crystal growth, or a small concave or protrusion portion may be formed in advance on the surface of seed crystal 10 such that nucleation of crystal growth is generated at the small concave or protrusion portion. Thereby, a bulk single crystal of good quality can be manufactured with a high yield.

摘要翻译： PCT No.PCT / JP95 / 02025 Sec。 371日期：1996年7月11日 102（e）日期1996年7月11日PCT提交1995年4月10日PCT公布。 第WO96 / 15297号公报 日期：1996年5月23日使用具有不同材质的薄板晶种10，待生长并具有大直径的晶体生长开始之前，溶液12s的下部的温度被溶解成 将溶剂（或熔体12m）设定为比上部更高的温度以引起对流，使得晶种10的表面通过保持在预定时间段内的对流而被冲洗。 然后，通过Bridgman方法或梯度冷冻法开始晶体生长。 在这种情况下，可以通过倾斜晶种10在晶种10的表面上提供温度梯度，使得在晶体开始时晶种10的表面的温度最低的位置处产生晶体生长成核 可以预先在晶种10的表面上形成生长或小的凹部或突出部，使得在小的凹部或突出部产生晶体生长的成核。 因此，可以高产率制造质量好的本体单晶。

公开(公告)号：US5454346A

公开(公告)日：1995-10-03

申请号：US194507

申请日：1994-02-10

申请人： Masayuki Uchida ,  Kenji Kohiro ,  Osamu Oda

发明人： Masayuki Uchida ,  Kenji Kohiro ,  Osamu Oda

IPC分类号： C30B11/06 ,  C30B11/00 ,  C30B27/00 ,  H01L21/208 ,  C30B11/08

CPC分类号： C30B29/40 ,  C30B11/00 ,  Y10T117/1092

摘要： A process for growing a multielement compound single crystal, includes the steps of placing a crucible holding a raw multielement compound of a predetermined set of composition ratios Y in a vertical crystal growing furnace having a heater, melting the raw multielement compound held in the crucible with the heater to produce a melt of the raw multielement compound in the crucible, controlling the output of the heater to grow a multielement compound single crystal of a predetermined set of composition ratios X from the melt so that the melt is solidified successively upwards from part of the melt in contact with the bottom of the crucible, and feeding to the melt as a solute at least one element of the raw multielement compound from above the level of the melt in the crucible so as to maintain the predetermined set of composition ratios X of the solute during growth of the multielement compound single crystal. The process can keep constant the composition of the grown multielement compound single crystal. The process is applicable to the growth of multielement compound semiconductor single crystals and multielement compound oxide single crystals.

摘要翻译： 用于生长多元素化合物单晶的方法包括以下步骤：将具有预定组成比Y的原料多元素化合物的坩埚放置在具有加热器的垂直晶体生长炉中，将保持在坩埚中的原料多元素化合物熔化， 加热器，以在坩埚中产生原料多元素化合物的熔体，控制加热器的输出以从熔体中生长具有预定组成比X的组合的多元素化合物单晶，使得熔体从部分 所述熔体与所述坩埚的底部接触，并且从所述坩埚中的所述熔体的高度上方以至少一种元素的原料多元素化合物作为溶质供给到所述熔体中，以保持所述熔融物的组成比X的预定组合 多元素化合物单晶生长过程中的溶质。 该方法可以使生长的多元素化合物单晶的组成保持恒定。 该方法适用于多元素化合物半导体单晶和多元素复合氧化物单晶的生长。

公开(公告)号：US5326717A

公开(公告)日：1994-07-05

申请号：US990707

申请日：1992-12-15

申请人： Toyoaki Imaizumi ,  Osamu Oda ,  Hironobu Sawatari

发明人： Toyoaki Imaizumi ,  Osamu Oda ,  Hironobu Sawatari

IPC分类号： H01L21/205 ,  H01L21/285 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L21/203

CPC分类号： H01L21/28581

摘要： A method of fabricating a Schottky electrode by the adsorption of thin layer with not more than 10 monolayers of a metal whose oxide is stable on a III-V compound semiconductor substrate such as InP or on a substrate, the surface on which epitaxial layer is grown, and the successive oxidation of the thin metal film is disclosed. Since the generation of dangling bonds at the interface due to the elastic strain between the substrate and the metal oxide can be prevented, it becomes possible to obtain a Schottky electrode with a high Schottky barrier height and thus to fabricate MESFETs and Schottky diodes having good characteristics such as a small reverse leak current and a large break-down voltage.

摘要翻译： 通过吸附具有不超过10个单层的氧化物在III-V化合物半导体衬底（例如InP）或衬底上稳定的金属（其上外延层生长的表面）制造肖特基电极的方法 并且公开了薄金属膜的连续氧化。 由于可以防止由于衬底和金属氧化物之间的弹性应变而在界面产生悬挂键，所以可以获得具有高肖特基势垒高度的肖特基电极，从而制造具有良好特性的MESFET和肖特基二极管 例如小的反向泄漏电流和大的击穿电压。

公开(公告)号：US5173127A

公开(公告)日：1992-12-22

申请号：US661616

申请日：1991-02-28

申请人： Haruhito Shimakura ,  Osamu Oda ,  Keiji Kainosho

发明人： Haruhito Shimakura ,  Osamu Oda ,  Keiji Kainosho

IPC分类号： C30B33/00 ,  H01L29/207 ,  H01L29/78

CPC分类号： C30B33/00 ,  C30B29/40 ,  H01L29/207 ,  H01L29/78

摘要： A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. The crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw or less. The crystal has a resistivity of 1.times.10.sup.6 .OMEGA..multidot.cm or more and a mobility of above 3,000 cm.sup.2 /V.multidot.s both at 300 K. A process of producing the crystal includes a step of heat-treating the intermediate under 6 kg/cm.sup.2 of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.

公开(公告)号：US4845564A

公开(公告)日：1989-07-04

申请号：US176199

申请日：1988-03-31

申请人： Kunio Hakamada ,  Shizuo Hanamura ,  Osamu Oda ,  Toshio Amano

发明人： Kunio Hakamada ,  Shizuo Hanamura ,  Osamu Oda ,  Toshio Amano

IPC分类号： H04N5/765 ,  H04N5/44 ,  H04N5/45 ,  H04N5/775

CPC分类号： H04N5/45 ,  H04N21/4263 ,  H04N21/4316 ,  H04N21/4334 ,  H04N21/4858 ,  H04N5/775

摘要： A television receiver incorporating a video cassette recorder and having a display, for example, a picture screen, for showing a main-channel picture within which a sub-channel picture may be superimposed, includes first and second tuners which are independently controllable for each selecting one of a number of broadcast channels, with the video signal broadcast on the channel selected by the first tuner being supplied to the display for forming the main-channel picture while the video signal broadcast on the channel selected by the second tuner is supplied to the display for forming the sub-channel picture in a sub-channel picture display mode of the receiver, and a system controller is programmed so that, when initiating a recording mode of the video cassette recorder, the second tuner is made to select the same broadcast channel as the first tuner.

摘要翻译： 一种包含录像机并具有显示器（例如，画面）的电视接收机，用于示出可以叠加子频道图像的主频道图像，其中包括可独立控制每个选择的第一和第二调谐器 多个广播频道中的一个广播频道，其中由第一调谐器选择的频道上的视频信号广播被提供给用于形成主频道图像的显示器，而在由第二调谐器选择的频道上广播的视频信号被提供给 用于在接收机的子频道图像显示模式中形成子频道图像的显示器，并且系统控制器被编程为使得当启动录像机的记录模式时，使第二调谐器选择相同的广播 通道作为第一个调谐器。

公开(公告)号：US3983152A

公开(公告)日：1976-09-28

申请号：US385868

申请日：1973-08-06

申请人： Osamu Oda ,  Kiyoshi Sakai ,  Takashi Yusa ,  Hamako Katano

发明人： Osamu Oda ,  Kiyoshi Sakai ,  Takashi Yusa ,  Hamako Katano

IPC分类号： A61K31/20 ,  B01J27/00 ,  B01J31/00 ,  C07B61/00 ,  C07C67/00 ,  C07C401/00 ,  C07C405/00 ,  C07D307/935 ,  C07D309/12 ,  C07D317/70 ,  C07D317/72 ,  C07D333/32 ,  C07D335/02 ,  C07C177/00

CPC分类号： C07D317/72 ,  C07C405/00 ,  Y02P20/55

摘要： Prostanoic acid derivatives having the formula ##SPC1##Wherein A represents an alkylene group having from 4 to 8 carbon atoms, R.sup.1 represents an alkyl group having from 4 to 10 carbon atoms, R.sup.2 represents hydrogen atom or an alkyl group having from one to 6 carbon atoms and R.sup.3 represents hydrogen atom or an alkoxycarbonyl group having from one to 6 carbon atoms in the alkyl moiety and the pharmaceutically acceptable salts thereof and also relates to a process for the preparation thereof.The compounds are useful as oxytocic agents and may be prepared by reducing the compound having the formula ##SPC2##Wherein A, R.sup.1, R.sup.2 and R.sup.3 are the same as above and Z represents a carbonyl-protecting group with a metal hydride complex in the presence or absence of an inert organic solvent to give a compound having the formula ##SPC3##Wherein A, R.sup.1, R.sup.2, R.sup.3 and Z are the same as above and removing the carbonyl-protecting group of the latter compound.

摘要翻译： 具有下式的前列腺酸衍生物，其中A表示具有4至8个碳原子的亚烷基，R 1表示具有4至10个碳原子的烷基，R 2表示氢原子或具有1至6个碳原子的烷基，R 3 表示氢原子或烷基部分中具有1至6个碳原子的烷氧基羰基及其药学上可接受的盐，并且涉及其制备方法。

公开(公告)号：US07172956B2

公开(公告)日：2007-02-06

申请号：US11095450

申请日：2005-03-31

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： H01L21/28 ,  H01L29/06

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

摘要翻译： 包含至少Al的III族氮化物底层，其位错密度为<= 1×10 11 / cm 2，和（002）面X射线摇摆曲线半宽 在集合的基材上形成<= 200秒的值。 在III族氮化物底层上方形成p型半导体层组，并且包括III族氮化物，其中Ga含量相对于总III族元素> 50％，载流子密度> 1×10 ^{16/3/3 3。 在p型半导体层组上形成发光层，并且包含多个相互隔离的岛状晶体。 在发光层上形成n型半导体层组，并且包含相对于> = 50％的总III族元素的Ga含量。}

公开(公告)号：US20050170539A1

公开(公告)日：2005-08-04

申请号：US11095450

申请日：2005-03-31

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： C23C14/06 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L21/00

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.