发明授权
- 专利标题： Method of forming a titanium film and a barrier film on a surface of a substrate through lamination
- 专利标题（中）： 通过层压在基板的表面上形成钛膜和阻挡膜的方法
-
申请号： US09473715申请日： 1999-12-29
-
公开(公告)号： US06537621B1公开(公告)日： 2003-03-25
- 发明人: Yasuo Kobayashi , Kunihiro Tada , Hideki Yoshikawa
- 申请人： Yasuo Kobayashi , Kunihiro Tada , Hideki Yoshikawa
- 优先权： JP8-280036 19961001
- 主分类号： C23C1634
- IPC分类号： C23C1634
摘要：
A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl4 and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N2 gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N2 gas in a ratio of 0.5 or lower with respect to the reducing gas.