公开(公告)号：US06537621B1

公开(公告)日：2003-03-25

申请号：US09473715

申请日：1999-12-29

申请人： Yasuo Kobayashi ,  Kunihiro Tada ,  Hideki Yoshikawa

发明人： Yasuo Kobayashi ,  Kunihiro Tada ,  Hideki Yoshikawa

IPC分类号： C23C1634

CPC分类号： H01L21/76843 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76879

摘要： A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl4 and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N2 gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N2 gas in a ratio of 0.5 or lower with respect to the reducing gas.

摘要翻译： 通过层叠在基板的表面上形成钛膜和氮化钛膜的方法，由此抑制由副产物引起的基板的污染并降低钛膜的接触电阻。 该方法包括以下步骤：使用包含TiCl 4和还原气体的第一工艺气体在衬底的表面上形成钛膜，使用含有N 2气体和还原气体的第二工艺气体对衬底进行等离子体处理，从而减少 Cl并使钛膜的表面氮化以形成氮化物层，并在具有氮化物层的钛膜上形成阻挡金属（例如，氮化钛膜）。 因此，通过层压在基板上形成钛膜和氮化钛膜。 第二处理气体相对于还原气体含有0.5以下的N 2气体。

公开(公告)号：US06197674B1

公开(公告)日：2001-03-06

申请号：US09112640

申请日：1998-07-09

申请人： Hideki Yoshikawa ,  Yasuo Kobayashi ,  Kunihiro Tada

发明人： Hideki Yoshikawa ,  Yasuo Kobayashi ,  Kunihiro Tada

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  C23C16/08 ,  H01L21/28568

摘要： A method of forming a CVD-Ti film includes the steps of loading a Si wafer into a chamber, setting an interior of the chamber at a predetermined reduced-pressure atmosphere, introducing TiCl4 gas, H2 gas, and Ar gas into the chamber, and generating a plasma of the introduced gas in the chamber to form a Ti film in a hole formed in an SiO2 film on the wafer. A wafer temperature is set to 400° to 800°, a supplied power is set to 100 W to 300 W, an internal chamber pressure is set to 0.5 Torr to 3.0 Torr, a flow rate ratio of TiCl4 gas to a sum of H2 gas and Ar gas is 1:100 to 1:300, and a flow rate ratio of H2 gas to Ar gas is 1:1 to 2:1.

摘要翻译： 形成CVD-Ti膜的方法包括以下步骤：将Si晶片装载到腔室中，将腔室的内部设置在预定的减压气氛下，将TiCl 4气体，H 2气体和Ar气体引入室中;以及 在室中产生引入气体的等离子体，以在晶片上的SiO 2膜形成的孔中形成Ti膜。 将晶片温度设定为400°〜800°，供给功率设定为100W〜300W，内部室压设定为0.5Torr〜3.0Torr，TiCl4气体与H2气体的流量比 Ar气体为1：100〜1：300，H2气体与Ar气体的流量比为1：1〜2：1。

公开(公告)号：US6051281A

公开(公告)日：2000-04-18

申请号：US941272

申请日：1997-09-30

申请人： Yasuo Kobayashi ,  Kunihiro Tada ,  Hideki Yoshikawa

发明人： Yasuo Kobayashi ,  Kunihiro Tada ,  Hideki Yoshikawa

IPC分类号： C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76856 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76879

摘要： A method of forming a titanium film and a titanium nitride film on a substrate by lamination which method is capable of suppressing contamination of the substrate due to the by-product and of reducing a contact resistance value of the titanium film. By carrying out the step of forming a titanium film on a surface of a substrate, the step of subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer, and the step of forming a barrier film (e.g., a titanium nitride film) on the titanium film having the nitride layer formed thereon, both the titanium film and the titanium nitride film are formed on the substrate by lamination.

摘要翻译： 通过层叠在基板上形成钛膜和氮化钛膜的方法，该方法能够抑制由于副产物引起的基板的污染并降低钛膜的接触电阻值。 通过在基板的表面上进行钛膜的形成工序，在氮气和氢气的混合气体的气氛中对基板进行等离子体处理，从而氮化钛膜的表面层 在其上形成氮化物层，并且在其上形成有氮化物层的钛膜上形成阻挡膜（例如，氮化钛膜）的步骤，通过层压在基板上形成钛膜和氮化钛膜 。

公开(公告)号：USPP29169P2

公开(公告)日：2018-04-03

申请号：US15530290

申请日：2016-12-19

申请人： Kenichi Arisumi ,  Yasuo Kobayashi

发明人： Kenichi Arisumi ,  Yasuo Kobayashi

IPC分类号： A01H5/02

CPC分类号： A01H5/02

摘要： A new and distinct cultivar of Tecoma plant named ‘Sunhortedai’, characterized by its upright and relatively compact plant habit; vigorous growth habit; freely branching habit; early and freely flowering habit; flowering under high temperature conditions; greyed orange-colored flowers; and low temperature tolerant.

公开(公告)号：US20100032838A1

公开(公告)日：2010-02-11

申请号：US12516862

申请日：2007-11-30

申请人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

发明人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

IPC分类号： H01L23/532 ,  H01L21/314 ,  C09D1/00

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/76811 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.

摘要翻译： 本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。 由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。 因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

公开(公告)号：US20070077737A1

公开(公告)日：2007-04-05

申请号：US10580036

申请日：2004-11-19

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H01L21/26 ,  H01L21/42 ,  H05H1/24

CPC分类号： C23C16/511 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244

摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

摘要翻译： 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，从气体供给构件（3）供给到处理室（1）中的C 5 C 8 C 8气体被变更（激活）为等离子体，从而 在半导体晶片（W）上形成一定厚度的含氟碳膜。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂布过程中，将C 5 F 8 N气体变成等离子体，并且含氟碳的预涂膜比含氟 形成在成膜工艺中形成的碳膜。

公开(公告)号：US06342763B1

公开(公告)日：2002-01-29

申请号：US09123403

申请日：1998-07-28

申请人： Mamoru Fukushima ,  Yasuo Kobayashi ,  Soichiro Ogawa

发明人： Mamoru Fukushima ,  Yasuo Kobayashi ,  Soichiro Ogawa

IPC分类号： H01J6100

CPC分类号： H01J9/28 ,  H01J61/045 ,  H01J61/366 ,  H01J61/72

摘要： A high frequency operation fluorescent lamp which can reduce a possibility of over-heat damage of a flare stem at the end of its life. In the lamp, a pair of intermediate lead wires are passed through the flare stem at each end of a light emitting envelope, and an insulator is provided to cover a top of the flare stem.

摘要翻译： 一种高频操作荧光灯，可以在其使用寿命结束时减少火炬杆过热损坏的可能性。 在灯中，一对中间引线在发光外壳的每个端部通过扩口杆，并且设置绝缘体以覆盖火炬杆的顶部。

公开(公告)号：US06229757B1

公开(公告)日：2001-05-08

申请号：US09315828

申请日：1999-05-21

申请人： Kyoichi Nagata ,  Yasuo Kobayashi

发明人： Kyoichi Nagata ,  Yasuo Kobayashi

IPC分类号： G11C800

CPC分类号： G11C7/1093 ,  G11C7/1066 ,  G11C7/1072 ,  G11C7/1087 ,  G11C7/22

摘要： In a double data rate type synchronous dynamic random access memory (DDR-SDRAM) device, a large latch margin of input data is secured. The DDR-SDRAM device is arranged by a data strobe signal processing circuit for detecting at least one of a rise edge of a data strobe signal and a fall edge thereof to thereby produce at least a first one-shot pulse signal; a clock signal processing circuit for detecting a rise edge of a clock signal to thereby produce a second one-shot pulse signal; and a data-in processing circuit for latching input data by using the first one-shot pulse signal produced from the data strobe signal, and further for latching the latched input data by using the second one-shot pulse signal produced from the clock signal, and also for simultaneously writing both the latched data into a memory cell in a parallel manner. The data-in processing circuit controls a delay amount of the first one-shot pulse signal and another delay amount of the second one-shot pulse signal so as to secure a latch margin of the input data.

摘要翻译： 在双倍数据速率类型的同步动态随机存取存储器（DDR-SDRAM）装置中，确保输入数据的大的锁存边沿。 DDR-SDRAM装置由数据选通信号处理电路配置，用于检测数据选通信号的上升沿及其下降沿中的至少一个，从而产生至少第一单触发脉冲信号; 时钟信号处理电路，用于检测时钟信号的上升沿，从而产生第二单触发脉冲信号; 以及数据输入处理电路，用于通过使用从数据选通信号产生的第一单触发脉冲信号来锁存输入数据，并且还用于通过使用从时钟信号产生的第二单触发脉冲信号来锁存锁存的输入数据， 并且还用于以并行方式同时将锁存的数据写入存储器单元。 数据输入处理电路控制第一单触发脉冲信号的延迟量和第二单触发脉冲信号的另一延迟量，以确保输入数据的锁存边沿。

公开(公告)号：US5851600A

公开(公告)日：1998-12-22

申请号：US953624

申请日：1997-10-17

申请人： Yasuhiro Horiike ,  Yasuo Kobayashi

发明人： Yasuhiro Horiike ,  Yasuo Kobayashi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  H01L21/31 ,  B05D3/04

CPC分类号： C23C16/509 ,  H01J37/32431

摘要： Plasma processing gas is introduced into an upper portion of a processing vessel and a film-formation gas is simultaneously introduced into the vicinity of a substrate to be processed. The plasma processing gas is ionized to form a first plasma and any of the plasma processing gas that has temporarily recombined in locations close to the substrate to be processed is re-ionized as a second plasma. As a result, the density of etchant ions used for cutting away overhangs around the openings of grooves can be increased. In other words, the number of etchant ions can be increased. This makes it possible to reduce the bias voltage applied to the substrate to be processed, preventing damage thereto.

摘要翻译： 将等离子体处理气体引入处理容器的上部，同时将成膜气体引入待处理的基板的附近。 等离子体处理气体被离子化以形成第一等离子体，并且在接近待处理衬底的位置中暂时重新组合的任何等离子体处理气体被再次离子化为第二等离子体。 结果，可以增加用于切除凹槽周围的突出部的蚀刻剂离子的密度。 换句话说，可以增加蚀刻剂离子的数量。 这使得可以减小施加到待处理基板的偏置电压，从而防止其损坏。

公开(公告)号：US5327388A

公开(公告)日：1994-07-05

申请号：US952977

申请日：1992-09-29

申请人： Yasuo Kobayashi

发明人： Yasuo Kobayashi

IPC分类号： G11C11/413 ,  G11C5/14 ,  G11C11/401 ,  G11C11/407 ,  G11C29/00 ,  G11C29/04 ,  G11C29/12 ,  G11C7/00

CPC分类号： G11C5/147

摘要： A semiconductor memory device with a power source voltage step-down circuit which generates a stepped-down voltage from electric power supplied from outside and supplies this stepped-down voltage to a memory cell array and peripheral circuits. Current switching device interposed in a circuit or circuits of the semiconductor memory device other than the memory cell array and a switch controlling signal generating means for generating a controlling signal in response to a signal from the outside are provided. The current switching device performs switching of current to flow through the circuit in response to a controlling signal.

摘要翻译： 一种具有电源电压降压电路的半导体存储器件，其从外部提供的电力产生降压电压，并将该降压电压提供给存储单元阵列和外围电路。 提供了插入电路中的电流开关器件或除了存储单元阵列之外的半导体存储器件的电路和用于响应于来自外部信号产生控制信号的开关控制信号产生装置。 当前的开关装置响应于控制信号执行电流的切换以流过电路。