- 专利标题: Polysilicon doped transistor
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申请号: US09848466申请日: 2001-05-03
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公开(公告)号: US06541317B2公开(公告)日: 2003-04-01
- 发明人: K. Paul Muller , Dominic J. Schepis , Ghavam G. Shahidi
- 申请人: K. Paul Muller , Dominic J. Schepis , Ghavam G. Shahidi
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
Steep concentration gradients are achieved in semiconductor device of small sizes by using implanted polycrystalline material such as polysilicon as a solid diffusion source. Rapid diffusion of impurities along grain boundaries relative to diffusion rates in monocrystalline materials provides a substantially constant impurity concentration at the interface between polycrystalline material and monocrystalline material. Steepness of the impurity concentration gradient is thus effectively scaled as transistor size is decreased to counter increased short channel and other deleterious effects.
公开/授权文献
- US20020162999A1 Polysilicon doped transistor 公开/授权日:2002-11-07