发明授权
- 专利标题： Small size, low consumption, multilevel nonvolatile memory
- 专利标题（中）： 小尺寸，低功耗，多级非易失性存储器
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申请号： US09972726申请日： 2001-10-04
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公开(公告)号： US06542404B2公开(公告)日： 2003-04-01
- 发明人: Andrea Pierin , Stefano Gregori , Rino Micheloni , Osama Khouri , Guido Torelli
- 申请人： Andrea Pierin , Stefano Gregori , Rino Micheloni , Osama Khouri , Guido Torelli
- 优先权： ITTO00A0936 20001006
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
A multilevel nonvolatile memory includes a supply line (28) supplying a supply voltage (VDD), a voltage boosting circuit (26) supplying a boosted voltage (Vp), higher than the supply voltage (VDD), a boosted line (30) connected to the voltage boosting circuit (26) and a reading circuit (25) including at least one comparator (35). The comparator (35) includes a first and a second input (35a, 35b), a first and a second output (45a, 45b), at least one amplification stage (40) connected to the boosted line (30), and a boosted line latch stage (41) connected to the supply line (28).
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