Invention Grant
- Patent Title: Double chamber ion implantation system
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Application No.: US09800539Application Date: 2001-03-07
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Publication No.: US06545419B2Publication Date: 2003-04-08
- Inventor: Michael C. Vella
- Applicant: Michael C. Vella
- Main IPC: H01J724
- IPC: H01J724

Abstract:
An improved double chamber ion source comprising a plasma generating chamber, a charge exchange chamber and a divider structure therebetween. The charge exchange chamber includes magnetic shielding material to reduce exposure of interior components to magnetic field lines externally generated. The double compartment ion source further comprises inclusion of a heat shield and/or a cooling system to overcome deleterious effects caused by increased temperature in the plasma generating chamber. The divider structure has a plurality of apertures having a configuration to reduce surface area on the divider structure in the charge exchange chamber.
Public/Granted literature
- US20020125829A1 Double chamber ion implantation system Public/Granted day:2002-09-12
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