Magnetic filter apparatus and method for generating cold plasma in
semicoductor processing
    1.
    发明授权
    Magnetic filter apparatus and method for generating cold plasma in semicoductor processing 失效
    用于在半导体加工中产生冷等离子体的磁过滤装置和方法

    公开(公告)号:US5545257A

    公开(公告)日:1996-08-13

    申请号:US258958

    申请日:1994-06-13

    Inventor: Michael C. Vella

    CPC classification number: H01J37/026 H01J2237/0044 H01J2237/31701

    Abstract: Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a "cold plasma" which is diffused in the region of the process surface while the ion implantation process takes place.

    Abstract translation: 本文公开了一种用于在离子注入工艺期间向半导体靶区域提供具有低电子温度的等离子体淹水的系统和方法。 提供等离子体的等离子体发生器耦合到磁过滤器,其允许离子和低能电子通过,同时保持俘获初级或高能量电子。 离子和低能电子形成“冷等离子体”,其在离子注入过程发生时在工艺表面的区域中扩散。

    Thermal regulation of an ion implantation system

    公开(公告)号:US06670623B2

    公开(公告)日:2003-12-30

    申请号:US09800643

    申请日:2001-03-07

    Inventor: Michael C. Vella

    CPC classification number: H01J37/3171 H01J37/08

    Abstract: A thermoregulation system for an ion implantation system to reduce the temperature in the ion implanter and components therein, or attached thereto, to a temperature at which an ion source material, used in the ion implanter, has a vapor pressure that yields a reduced concentration of vapors. Such arrangement markedly reduces the risk of exposure to harmful vapors from the ion source material.

    Charge exchange molecular ion source
    3.
    发明授权
    Charge exchange molecular ion source 失效
    电荷交换分子离子源

    公开(公告)号:US06573510B1

    公开(公告)日:2003-06-03

    申请号:US09596828

    申请日:2000-06-19

    Inventor: Michael C. Vella

    CPC classification number: H01J27/04

    Abstract: Ions, particularly molecular ions with multiple dopant nucleons per ion, are produced by charge exchange. An ion source contains a minimum of two regions separated by a physical barrier and utilizes charge exchange to enhance production of a desired ion species. The essential elements are a plasma chamber for production of ions of a first species, a physical separator, and a charge transfer chamber where ions of the first species from the plasma chamber undergo charge exchange or transfer with the reactant atom or molecules to produce ions of a second species. Molecular ions may be produced which are useful for ion implantation.

    Abstract translation: 离子,特别是每个离子具有多个掺杂剂核子的分子离子,是通过电荷交换产生的。 离子源包含由物理屏障分开的至少两个区域,并且利用电荷交换来增强所需离子种类的产生。 基本要素是用于生产第一种离子的物质分隔器和电荷转移室的等离子体室,其中来自等离子体室的第一种离子的离子与反应物原子或分子进行电荷交换或转移以产生离子 第二种。 可以产生可用于离子注入的分子离子。

    Double chamber ion implantation system

    公开(公告)号:US06545419B2

    公开(公告)日:2003-04-08

    申请号:US09800539

    申请日:2001-03-07

    Inventor: Michael C. Vella

    CPC classification number: H01J37/08 H01J2237/31701

    Abstract: An improved double chamber ion source comprising a plasma generating chamber, a charge exchange chamber and a divider structure therebetween. The charge exchange chamber includes magnetic shielding material to reduce exposure of interior components to magnetic field lines externally generated. The double compartment ion source further comprises inclusion of a heat shield and/or a cooling system to overcome deleterious effects caused by increased temperature in the plasma generating chamber. The divider structure has a plurality of apertures having a configuration to reduce surface area on the divider structure in the charge exchange chamber.

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