Invention Grant
US06548008B1 Method for bending SI materials and core wire member of SI materials
失效
SI材料的SI材料和芯线构件的弯曲方法
- Patent Title: Method for bending SI materials and core wire member of SI materials
- Patent Title (中): SI材料的SI材料和芯线构件的弯曲方法
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Application No.: US09323781Application Date: 1999-06-01
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Publication No.: US06548008B1Publication Date: 2003-04-15
- Inventor: Kazuya Kuriyama , Takayuki Furukoshi
- Applicant: Kazuya Kuriyama , Takayuki Furukoshi
- Priority: JP10-169234 19980601
- Main IPC: B29C5308
- IPC: B29C5308

Abstract:
Si material, which has been considered to be very brittle, and hard to bend, is heated to at least its brittle-ductile transition temperature. A bending moment is applied to a heated portion of the Si material so that a slip deformation is generated. Whereby it is possible to perform bending, and to greatly improve a degree of freedom for machining the Si material. The Si material has a brittle-ductile transition temperature which transfers from a brittle to a ductile state at its brittle-ductile transition temperature. At the transition temperature or more, the Si material is in a state that a slip can to be generated between its crystals in response to a bending torque applied thereto. Thus, when a bending moment is applied to the heated portion of the Si material which is heated to the transition temperature or more, a slip is generated between lattices or between crystal grains in the heated portion, so that the Si material is deformed.
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