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公开(公告)号：US06732909B2
公开(公告)日：2004-05-11
申请号：US10170081
申请日：2002-06-11
IPC分类号： B23K2000
CPC分类号： B23K35/005 , B23K35/302 , B23K35/32 , C23C14/3407
摘要： A backing plate of Ti for supporting a Ti sputtering target is formed of at least two components welded together. The backing plate is welded by interposing a Cu or Zr foil or powder between faces to be welded, and then heating the assembly to a reaction temperature high enough to melt one of the Ti and Cu or Zr to produce a liquid phase. The heating temperature is retained for a time long enough to permit diffusion of the Cu or Zr into the Ti to produce a liquid phase diffusion weld. By permitting diffusion to occur, a separate metallic compound is not produced at the welding face. In effect welding is accomplished without producing a welding face, whereby no interface exists in the finished weld. The resulting weld has a strength substantially equal to the strength of the Ti material, and very good welding qualities.
摘要翻译： 用于支撑Ti溅射靶的Ti的背板由焊接在一起的至少两个部件形成。 通过在待焊接的面之间插入Cu或Zr箔或粉末来焊接背板，然后将组件加热至足够高的反应温度以熔化Ti和Cu或Zr之一以产生液相。 加热温度保持足够长的时间以允许Cu或Zr扩散到Ti中以产生液相扩散焊接。 通过允许扩散发生，在焊接面处不产生单独的金属化合物。 实际上，在不产生焊接面的情况下实现焊接，由此在成品焊缝中不存在界面。 所得到的焊接的强度基本上等于Ti材料的强度，并具有非常好的焊接质量。
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2.发明授权Welding process for Ti material and Cu material, and a backing plate for a sputtering target 失效Ti材料和Cu材料的焊接工艺，以及用于溅射靶的背板公开(公告)号：US06789723B2
公开(公告)日：2004-09-14
申请号：US09160665
申请日：1998-09-25
IPC分类号： B23K120
CPC分类号： B23K35/007 , B23K35/005 , B23K35/262 , B23K35/302 , B23K2103/12 , B23K2103/14 , B23K2103/18
摘要： A welding process for welding a Cu material to a Ti material includes interposing a tertiary component between the Ti material and the Cu material. The tertiary component is of a type of metal that, with Cu, forms a compound which is liquified at a temperature below the eutectic temperature of Ti and Cu. The above materials are heated and welded at temperature of (700 through 887° C.). The temperature selected is below the eutectic temperature of the Ti and Cu. The finished material forms a sputtering backing plate for a sputtering. A target member, bonded to the Cu material side of the backing plate, completes the sputtering target. In one embodiment, the proportion of the tertiary metal is achieved by controlling a thickness of the tertiary metal deposited on the Cu material. In another embodiment, the proportion of the tertiary metal is achieved by controlling the thickness of a layer of powder of the tertiary material deposited between the Cu and Ti materials.
摘要翻译： 将Cu材料焊接到Ti材料的焊接工艺包括在Ti材料和Cu材料之间插入第三成分。 第三组分是一种金属，其与Cu形成在低于Ti和Cu的共晶温度的温度下液化的化合物。 将上述材料在（700至887℃）的温度下加热和焊接。 所选择的温度低于Ti和Cu的共晶温度。 成品材料形成用于溅射的溅射背板。 结合到背板的Cu材料侧的目标构件完成溅射靶。 在一个实施方案中，通过控制沉积在Cu材料上的第三金属的厚度来实现第三金属的比例。 在另一个实施方案中，通过控制沉积在Cu和Ti材料之间的第三材料的粉末层的厚度来实现第三金属的比例。
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公开(公告)号：US06548008B1
公开(公告)日：2003-04-15
申请号：US09323781
申请日：1999-06-01
IPC分类号： B29C5308
CPC分类号： B21D7/025
摘要： Si material, which has been considered to be very brittle, and hard to bend, is heated to at least its brittle-ductile transition temperature. A bending moment is applied to a heated portion of the Si material so that a slip deformation is generated. Whereby it is possible to perform bending, and to greatly improve a degree of freedom for machining the Si material. The Si material has a brittle-ductile transition temperature which transfers from a brittle to a ductile state at its brittle-ductile transition temperature. At the transition temperature or more, the Si material is in a state that a slip can to be generated between its crystals in response to a bending torque applied thereto. Thus, when a bending moment is applied to the heated portion of the Si material which is heated to the transition temperature or more, a slip is generated between lattices or between crystal grains in the heated portion, so that the Si material is deformed.
摘要翻译： 被认为是非常脆的且难以弯曲的Si材料被加热到至少其脆性 - 延性转变温度。 弯曲力矩施加到Si材料的加热部分，从而产生滑动变形。 由此可以进行弯曲，并且大大提高了Si材料的加工自由度。 Si材料具有脆性 - 延性转变温度，其脆性 - 延性转变温度从脆性转变为延性。 在转变温度以上时，Si材料处于响应施加于其的弯曲转矩而在其晶体之间产生滑移的状态。 因此，当加热到转变温度以上的Si材料的加热部分施加弯曲力矩时，在加热部分的晶格之间或晶粒之间产生滑动，使得Si材料变形。
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公开(公告)号：US5825655A
公开(公告)日：1998-10-20
申请号：US765453
申请日：1997-01-22
CPC分类号： G05B19/4067 , G05B2219/50108 , G05B2219/50109 , G05B2219/50111 , G05B2219/50112
摘要： A normal operating condition restoration device which comprises: (a) taught point memory device for storing successive taught points that constitute a work line on which a tool travels in relation to a workpiece and storing taught points for retraction which are among the taught points constituting the work line and to which the tool can be retracted from the workpiece; (b) tool abnormality detecting device for detecting abnormal conditions which have occurred in the tool traveling on the work line relative to the workpiece; and (c) controlling device for performing control. Upon detection of occurrence of abnormal conditions in the tool by the tool abnormality detecting device, the tool is shifted from an abnormality occurring point to the nearest taught point for retraction, following back a path on the work line which the tool has already passed, according to point information stored in the taught point memory device so that the abnormal tool is retracted from the workpiece, and such that a new tool or repaired tool is then brought to the abnormality occurring point by way of the above path on the work line to be installed thereat.
摘要翻译： PCT No.PCT / JP95 / 01521 Sec。 371日期1997年1月22日 102（e）日期1997年1月22日PCT提交1995年7月31日PCT公布。 出版物WO96 / 04109 日期1996年2月15日一种正常运行状态恢复装置，包括：（a）教导点存储装置，用于存储构成工具相对于工件行进的工作线的连续教导点，并存储用于回缩的教导点 构成工作线的教导点，工具可从工件退回; （b）工具异常检测装置，用于检测工具相对于工件在工作线上行进的工具中发生的异常状况; 和（c）控制装置进行控制。 在通过刀具异常检测装置检测到工具中的异常状况的情况下，将工具从异常发生点移动到最近的用于退回的教导点，跟随工具已经通过的工作线上的路径，根据 指示存储在教导点存储装置中的信息，使得异常工具从工件退回，并且使得新的工具或修理的工具随后通过工作线上的路径被带到异常发生点 安装在那里
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