A method for fabricating a TFT including a crystalline silicon active layer is disclosed, in which the metal which induced the crystallization of the active layer is offset from a gate electrode utilizing a mask used to form a lightly doped drain (LDD) region or an offset junction region in the active layer. The TFT includes a silicon active layer crystallized by crystallization inducing metal and a gate electrode, and has an LDD region or an offset junction region formed in the vicinity of the channel region. The method for fabricating the TFT forms a metal offset region without using an additional photoresist forming process, and forms a LDD region by conducting a low density doping in the metal offset region. As a result, a transistor made according to the present invention has low leakage current in its off-state, and has stable electrical characteristics in its on-state.