• 专利标题: Ion beam irradiation apparatus and method of igniting a plasma for the same
  • 申请号: US10131085
    申请日: 2002-04-25
  • 公开(公告)号: US06548381B2
    公开(公告)日: 2003-04-15
  • 发明人: Nariaki Hamamoto
  • 申请人: Nariaki Hamamoto
  • 优先权: JP2001-129014 20010426
  • 主分类号: H01L21425
  • IPC分类号: H01L21425
Ion beam irradiation apparatus and method of igniting a plasma for the same
摘要:
When a plasma is ignited in a plasma generator, an ion beam is made to run in the plasma generator, and in this state, a positive voltage with respective to ground is applied to a plasma production chamber from a DC power source. Secondary electrons are generated when the ion beam collides with a plasma generating gas which flows out of the plasma production chamber into a path of the ion beam. The secondary electrons are led into the plasma production chamber by the positive voltage, and within the plasma production chamber, a plasma ignition is triggered using the secondary electrons led into the plasma production chamber and a radio frequency.
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