发明授权
- 专利标题: Methods of a high density flip chip memory arrays
- 专利标题(中): 高密度倒装芯片存储阵列的方法
-
申请号: US09398337申请日: 1999-09-17
-
公开(公告)号: US06548392B2公开(公告)日: 2003-04-15
- 发明人: Salman Akram , Warren M. Farnworth , Alan G. Wood
- 申请人: Salman Akram , Warren M. Farnworth , Alan G. Wood
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
A low alpha emissivity-induced error solder bump, flip-chip integrated circuit device. The device includes a semiconductor die having an active surface and a bond pad array disposed about the active surface of the die. The active surface of the die includes logic circuits adjacent memory cell arrays. Each of the bond pads directly overlays a logic circuit, to which they may be connected. The present invention also includes methods for designing and fabricating the invented devices and connecting them to a carrier substrate.
公开/授权文献
- US20020058395A1 HIGH DENSITY FLIP CHIP MEMORY ARRAYS 公开/授权日:2002-05-16
信息查询