A method for etching material which does not readily form volatile compounds in a plasma includes providing a plasma etch chamber including a wafer electrode at an initial temperature. The wafer electrode supports a wafer, and the wafer includes a layer of the material which does not readily form volatile compounds in plasma. The wafer is bombarded with charged particles from a plasma generated in the plasma etch chamber to impart thermal energy to the wafer. A reactive gas flow is provided to react with etch products of the material. Bias power is applied to the wafer electrode to impart bombardment energy to the charged particles incident on the wafer from the plasma such that a predetermined temperature is generated on a surface of the wafer wherein the wafer electrode is maintained at about the initial temperature.