发明授权
- 专利标题： Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
- 专利标题（中）： 使用原子层沉积和化学气相沉积技术沉积难熔金属层的分叉沉积工艺
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申请号： US09605593申请日： 2000-06-28
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公开(公告)号： US06551929B1公开(公告)日： 2003-04-22
- 发明人: Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
- 申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.
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