Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped

发明授权

US06551931B1 Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped 失效

标题翻译：选择性地与铟或锡青铜和/或其氧化物覆盖互连的方法以及如此封闭的互连

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专利标题： Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped
专利标题（中）： 选择性地与铟或锡青铜和/或其氧化物覆盖互连的方法以及如此封闭的互连
申请号： US09706820

申请日： 2000-11-07
公开(公告)号： US06551931B1

公开(公告)日： 2003-04-22
发明人: Daniel C. Edelstein , Sung Kwon Kang , Maurice McGlashan-Powell , Eugene J. O'Sullivan , George F. Walker
申请人： Daniel C. Edelstein , Sung Kwon Kang , Maurice McGlashan-Powell , Eugene J. O'Sullivan , George F. Walker
主分类号： H01L2144
IPC分类号： H01L2144

Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped

摘要：

A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.

摘要（中）：

提供一种选择性地覆盖与铟或锡青铜及其铜氧化物的互连的方法。本发明还提供如此形成的互连和铜表面。

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