发明授权
- 专利标题： Hetero-junction field effect transistor having an intermediate layer
- 专利标题（中）： 具有中间层的异质结场效应晶体管
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申请号： US09818587申请日： 2001-03-28
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公开(公告)号： US06552373B2公开(公告)日： 2003-04-22
- 发明人: Yuji Ando , Hironobu Miyamoto , Naotaka Iwata , Koji Matsunaga , Masaaki Kuzuhara , Kensuke Kasahara , Kazuaki Kunihiro , Yuji Takahashi , Tatsuo Nakayama , Nobuyuki Hayama , Yasuo Ohno
- 申请人： Yuji Ando , Hironobu Miyamoto , Naotaka Iwata , Koji Matsunaga , Masaaki Kuzuhara , Kensuke Kasahara , Kazuaki Kunihiro , Yuji Takahashi , Tatsuo Nakayama , Nobuyuki Hayama , Yasuo Ohno
- 优先权： JP2000-88973 20000328
- 主分类号： H01L31072
- IPC分类号： H01L31072
摘要：
A hetero-junction FET has an intermediate layer including n-type-impurity doped layer between an electron supply layer and an n-type cap layer. The intermediate layer cancels the polarized negative charge generated between the electron supply layer and the n-type cap layer by ionized positive charge, thereby reducing the barrier against the electrons and source/drain resistance.
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