Hetero-junction bipolar phototransistor with improved noise characteristic
    4.
    发明授权
    Hetero-junction bipolar phototransistor with improved noise characteristic 有权
    具有改善噪声特性的异质结双极光电晶体管

    公开(公告)号:US09076906B2

    公开(公告)日:2015-07-07

    申请号:US13138410

    申请日:2010-02-12

    摘要: A hetero-junction bipolar phototransistor includes a photo-absorption layer formed of a first conductivity type semiconductor layer, and a collector operating as a barrier layer, a base layer, and an emitter layer, which are stacked in sequence on the photo-absorption layer. The photo-absorption layer, collector, base layer and emitter layer forms a first mesa structure, and an emitter contact layer forms a second mesa structure. The photo-absorption layer includes a semiconductor layer with a narrow gap corresponding to a light-sensing wavelength of the phototransistor. The collector includes a semiconductor layer with a wider gap than a gap of the photo-absorption layer. The base layer has an energy level equal to or higher than the energy level of the collector. The emitter layer has a wide gap as compared to the base layer, and an energy level in a valence band is lower than an energy level of the base layer.

    摘要翻译: 异质结双极性光电晶体管包括由第一导电型半导体层形成的光吸收层和作为阻挡层,基极层和发射极层的集电体,其顺序层叠在光吸收层上 。 光吸收层,集电体,基极层和发射极层形成第一台面结构,并且发射极接触层形成第二台面结构。 光吸收层包括具有对应于光电晶体管的感光波长的窄间隙的半导体层。 集电体包括具有比光吸收层的间隙更宽的间隙的半导体层。 基层具有等于或高于集电极能级的能级。 发射极层与基底层相比具有宽的间隙,并且价带中的能级低于基底层的能级。

    Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances
    5.
    发明授权
    Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances 失效
    具有降低的寄生电容的场效应晶体管类型的III族氮化物半导体器件

    公开(公告)号:US06765241B2

    公开(公告)日:2004-07-20

    申请号:US10362883

    申请日:2003-02-27

    IPC分类号: H01L29812

    摘要: A group III nitride semiconductor device of field effect transistor type having improved productivity, reduced parasitic capacitances adapted for excellent device performance in high-speed operation as well as good heat diffusion characteristics. The device includes an epitaxial growth layer of a group III nitride semiconductor with a buffer layer laid under it, formed on an A plane (an (11-20) plane) of a sapphire. Thereon a gate electrode, a source electrode, a drain electrode, and pad electrodes are formed, and a ground conductor layer is formed on the back face of the sapphire substrate. A thickness of said sapphire substrate tsub satisfies the following Equation (1). t sub ≦ 10 ⁢ ϵ sub ⁢ S pad ϵ epi ⁢ S gate ⁢ t act where Spad is an area of the pad electrode; Sgate is an area of the gate electrode; &egr;sub is a relative permittivity of the sapphire substrate in the direction of the thickness; &egr;epi is a relative permittivity of the group III nitride semiconductor layer in the direction of the thickness; tsub is a thickness of the sapphire substrate; and tact is an effective thickness of the group III nitride semiconductor layer.

    摘要翻译: 具有提高生产率的场效应晶体管类型的III族氮化物半导体器件,适于在高速操作中优异的器件性能以及良好的热扩散特性的减小的寄生电容。 该器件包括形成在蓝宝石的A平面((11-20)面)上的具有缓冲层的III族氮化物半导体的外延生长层。 在其上形成栅电极,源电极,漏电极和焊盘电极,并且在蓝宝石衬底的背面上形成接地导体层。 所述蓝宝石衬底tsub的厚度满足以下等式(1)。其中,Spad是焊盘电极的面积; Sgate是栅电极的面积; epsilonsub是蓝宝石衬底在厚度方向上的相对介电常数;εilon 是III族氮化物半导体层在厚度方向上的相对介电常数; tsub是蓝宝石衬底的厚度; andtact是III族氮化物半导体层的有效厚度。

    Magnetoresistive pressure-sensing device for automotive electronic
engine control systems
    7.
    发明授权
    Magnetoresistive pressure-sensing device for automotive electronic engine control systems 失效
    用于汽车电子发动机控制系统的磁阻压力传感装置

    公开(公告)号:US4217783A

    公开(公告)日:1980-08-19

    申请号:US12376

    申请日:1979-02-15

    IPC分类号: G01L9/00 G01L9/16 G01L9/04

    CPC分类号: G01L9/16 G01L9/0051

    摘要: A pressure sensor comprises essentially magnetoresistive elements formed on a diaphragm serving as a stress magnifier. The diaphragm may be made, for example, of glass in a thickness of 0.5 millimeter, and the magnetoresistive elements can be formed thereon in any desired pattern of thin stripes by ordinary thin-film techniques. Such sensor elements can be mass produced, e.g., by vapor deposition and etching on a large sheet of diaphragm material and cutting into chips of desired shape and size.

    摘要翻译: 压力传感器包括基本上形成在用作应力放大器的隔膜上的磁阻元件。 隔膜可以由例如0.5mm厚的玻璃制成,并且可以通过普通薄膜技术以任何所需的薄条纹图案在其上形成磁阻元件。 这样的传感器元件可以例如通过在大片隔膜材料上的气相沉积和蚀刻而大量生产并切割成所需形状和尺寸的芯片。

    HETERO-JUNCTION BIPOLAR PHOTOTRANSISTOR
    8.
    发明申请
    HETERO-JUNCTION BIPOLAR PHOTOTRANSISTOR 有权
    异相结合双极照相机

    公开(公告)号:US20110291158A1

    公开(公告)日:2011-12-01

    申请号:US13138410

    申请日:2010-02-12

    IPC分类号: H01L31/0352

    摘要: The present invention provides a HPT having high sensitivity and extensive wavelength band characteristics. The collector and barrier layer (5) is formed on the photo-absorption layer (6), wherein the energy level in the conduction band is higher than that of the photo-absorption layer (6), the energy level in the valence band is almost equal to or higher than that of the photo-absorption layer (6) and is a relatively wider gap semiconductor than the photo-absorption layer. The base layer (4) formed on the collector and barrier layer (5), is a relatively narrow gap as compared with the collector and barrier layer (5), wherein the energy level in the conduction band is equal to or higher than that of the collector and barrier layer (5) in the boundary of the collector and barrier layer (5). The emitter layer (3) formed on a base layer (4) is a relatively wide gap as compared with the base layer (4), and the energy level in the valence band is the first conductivity type semiconductor layer lower than that of the base layer (4).

    摘要翻译: 本发明提供具有高灵敏度和广泛波长带特性的HPT。 在光吸收层(6)上形成集电极和阻挡层(5),其中导带中的能级高于光吸收层(6)的能级,价带中的能级为 几乎等于或高于光吸收层(6),并且是比光吸收层更宽的间隙半导体。 形成在集电极和阻挡层(5)上的基底层(4)与集电极和阻挡层(5)相比是相对窄的间隙,其中导带中的能级等于或高于 在集电体和阻挡层(5)的边界中的集电极和阻挡层(5)。 形成在基底层(4)上的发射极层(3)与基底层(4)相比是相对较宽的间隙,并且价带中的能级是第一导电类型半导体层低于基底层 层(4)。

    Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device
    10.
    发明授权
    Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device 失效
    半导体装置,半导体集成电路及半导体装置的制造方法

    公开(公告)号:US06507089B1

    公开(公告)日:2003-01-14

    申请号:US09589681

    申请日:2000-06-07

    IPC分类号: H01L27082

    CPC分类号: H01L27/082 H03K17/08146

    摘要: A semiconductor device is provided with a plurality of hetero junction bipolar transistors arranged in a specified direction. Also, the semiconductor device comprises emitter wiring connected to each emitter of the plural hetero junction bipolar transistors, collector wiring connected to each collector of said plural hetero junction bipolar transistors, and base wiring connected to at least one base of said plural hetero junction bipolar transistors. Bases that are not connected to the base wiring among the bases of the plural hetero junction bipolar transistors are connected to the emitter wiring.

    摘要翻译: 半导体器件设置有沿指定方向布置的多个异质结双极晶体管。 此外,半导体器件包括连接到多个异质结双极晶体管的每个发射极的发射极布线,连接到所述多个异质结双极晶体管的每个集电极的集电极布线,以及连接到所述多个异质结双极晶体管的至少一个基极的基极布线 。 在多个异质结双极晶体管的基极之间未连接到基极布线的基极连接到发射极布线。