发明授权
- 专利标题: Ultra compact DRAM cell and method of making
- 专利标题(中): 超小型DRAM单元及其制造方法
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申请号: US09385931申请日: 1999-08-30
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公开(公告)号: US06552378B1公开(公告)日: 2003-04-22
- 发明人: Heinz Hoenigschmid , Louis Lu-Chen Hsu , Jack Allan Mandelman
- 申请人: Heinz Hoenigschmid , Louis Lu-Chen Hsu , Jack Allan Mandelman
- 主分类号: H01L27108
- IPC分类号: H01L27108
摘要:
A structure and method of manufacture is disclosed herein for a semiconductor memory cell having size of 4.5 F2 or less, where F is the minimum lithographic dimension. The semiconductor memory cell includes a storage capacitor formed in a trench, a transfer device formed in a substantially electrically isolated mesa region extending over a substantial arc of the outer perimeter of the trench, a buried strap which conductively connects the transfer device to the storage capacitor, wherein the transfer device has a controlled conduction channel located at a position of the arc removed from the buried strap.