- 专利标题: Positive photoresist composition
-
申请号: US09826850申请日: 2001-04-06
-
公开(公告)号: US06555289B2公开(公告)日: 2003-04-29
- 发明人: Tomoya Sasaki , Kazuyoshi Mizutani , Shoichiro Yasunami
- 申请人: Tomoya Sasaki , Kazuyoshi Mizutani , Shoichiro Yasunami
- 优先权: JP2000-105299 20000406
- 主分类号: G03C173
- IPC分类号: G03C173
摘要:
Provided is a positive photoresist composition for use in the production of a semiconductor device, which ensures high resolution, reduced edge roughness of a line pattern and a small number of development defects. The positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an alkali developer increases under the action of an acid.
公开/授权文献
- US20020048720A1 Positive photoresist composition 公开/授权日:2002-04-25
信息查询