摘要:
Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
摘要:
A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
摘要:
According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of R1 independently represents a hydrogen atom or an optionally substituted methyl group, R2 represents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple R2s may be identical to or different from each other.
摘要:
A resist composition includes (A) a resin including: a repeating unit capable of decomposing by the action of an acid to increase solubility in an alkali developing solution and represented by formula (I), and a repeating unit represented by formula (II); and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation: wherein A represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxyl group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, or an aralkyl group; Ra represents a group containing a group capable of decomposing by the action of an acid; Rb represents an alkylene group, a cycloalkylene group, or a group of combining these groups; Y represents a heterocyclic group; and m represents 0 or 1.
摘要:
A positive resist composition, comprising: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin having a repeating unit containing at least one alicyclic structure, of which solubility in an alkali developer increases under an action of an acid; and (C) an alkali-soluble resin having a siloxane bond as a main chain.
摘要:
Provided is a resist composition including a compound having a molecular weight of 1,000 or less and containing at least one sulfonamide group (—SO2NH—).
摘要:
A positive resist composition, includes: (B1) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B1) in an aqueous alkali solution, the resin (B1) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification; (B2) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B2) in an aqueous alkali solution, the resin (B2) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification and containing a specific aromatic ring structure-containing repeating unit as defined in the specification; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
摘要:
A positive resist composition, includes: (A) a resin having a repeating unit represented by formula (A) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (A) in an alkali developer; and a pattern forming method uses the composition.
摘要:
A resist composition, comprises: (A) a resin containing a repeating unit represented by formula (I); (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; and (C) a solvent containing: (C1) a propylene glycol monoalkyl ether carboxylate; and (C2) at least one member selected from the group consisting of a propylene glycol monoalkyl ether, an alkyl lactate, an acetic acid ester, an alkyl alkoxypropionate, a chain ketone and a cyclic ketone: wherein AR represents a substituted or unsubstituted benzene ring or a substituted or unsubstituted naphthalene ring; Rn represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group or a substituted or unsubstituted aryl group; and A represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a halogen atom, a cyano group or a substituted or unsubstituted alkyloxycarbonyl group, and the pattern forming method uses the same.
摘要:
A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.