发明授权
- 专利标题: Charged particle beam lithography apparatus for forming pattern on semi-conductor
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申请号: US10194003申请日: 2002-07-15
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公开(公告)号: US06555833B2公开(公告)日: 2003-04-29
- 发明人: Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
- 申请人: Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
- 优先权: JP9-141381 19970530
- 主分类号: H01J37304
- IPC分类号: H01J37304
摘要:
In order to provide a high-speed and high accuracy cell projection exposure apparatus which greatly increases a pattern projection speed, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
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