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    Charged particle beam lithography apparatus for forming pattern on semi-conductor
    3.
    发明授权
    Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
    用于在半导体上形成图案的带电粒子束光刻设备

    公开(公告)号：US06329665B1

    公开(公告)日：2001-12-11

    申请号：US09621708

    申请日：2000-07-21

    申请人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    发明人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    IPC分类号： H01J37304

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

    摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

    摘要翻译： 为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过 通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择孔，将传播孔连续地提供给掩模传送方向，模板掩模在与梁一起传播的同时被移动，而其它模版 当指定的模板掩模孔组被曝光时，执行掩模转印。 重复这些操作，以便执行所有曝光处理。

    Charged particle beam lithography apparatus for forming pattern on semi-conductor
    5.
    发明授权
    Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
    用于在半导体上形成图案的带电粒子束光刻设备

    公开(公告)号：US06441383B1

    公开(公告)日：2002-08-27

    申请号：US09814062

    申请日：2001-03-22

    申请人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    发明人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    IPC分类号： H01J37304

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

    摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

    摘要翻译： 为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过 通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择光圈，传送孔径被连续地用于掩模传送方向，模板掩模在与光束一起传播的同时被移动，而其它模版 当指定的模板掩模孔组被曝光时，执行掩模转印。 重复这些操作，以便执行所有曝光处理。

    Charged particle beam lithography apparatus for forming pattern on semi-conductor
    8.
    发明授权
    Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
    用于在半导体上形成图案的带电粒子束光刻设备

    公开(公告)号：US06262428B1

    公开(公告)日：2001-07-17

    申请号：US09621577

    申请日：2000-07-21

    申请人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    发明人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    IPC分类号： H01J37304

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

    摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

    摘要翻译： 为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过 通过其他模板掩模的透射孔，同时用光束偏转装置选择在模板掩模上的孔，传送孔被连续地用于掩模传送方向，模板掩模在与梁一起传播的同时移动，而其它模板掩模 当指定的模板掩模孔组被曝光时执行传送。 重复这些操作，以便执行所有曝光处理。

    Electron beam writing system
    9.
    发明授权
    Electron beam writing system 失效
    电子束写入系统

    公开(公告)号：US5650631A

    公开(公告)日：1997-07-22

    申请号：US470592

    申请日：1995-06-07

    申请人： Yasunari Sohda ,  Masahide Okumura ,  Yasuhiro Someda ,  Hidetoshi Satoh ,  Yoshinori Nakayama ,  Norio Saitou

    发明人： Yasunari Sohda ,  Masahide Okumura ,  Yasuhiro Someda ,  Hidetoshi Satoh ,  Yoshinori Nakayama ,  Norio Saitou

    IPC分类号： G21K5/04 ,  G03F7/20 ,  H01J37/04 ,  H01J37/09 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027 ,  H01J37/30

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0435 ,  H01J2237/31774 ,  H01J2237/31776

    摘要： A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes. The deflected beam portions are blocked by a downstream aperture that permits the non-deflected electron beam portions to pass through for forming the patterns to be written.

    摘要翻译： 消隐阵列用于控制电子束写入系统中的电子束。 阵列中的电极平行地形成，并且彼此正交的两组平行电极被用于将电子束分成多个单独的曝光区域。 这些平行电极组可以通过丝网形成一个阵列，或者可以在不同的焦点位置处彼此间隔开或更远的两个分离的阵列中形成。 电极被设置成延伸穿过诸如正方形或三角形孔的孔。 对于三角形孔，电极与三角形的斜边平行。 通过组合曝光区域形成书写图案。 通过对相邻的电极施加相反极性的电压来实现对每个曝光区域的控制，以便偏转通过相邻电极的光束的部分。 偏转的光束部分被允许非偏转的电子束部分通过以形成待写入的图案的下游孔阻挡。

    Method of fabricating semiconductor circuit devices utilizing multiple exposures
    10.
    发明授权
    Method of fabricating semiconductor circuit devices utilizing multiple exposures 失效

    公开(公告)号：US6159644A

    公开(公告)日：2000-12-12

    申请号：US142077

    申请日：1998-09-01

    申请人： Hidetoshi Satoh ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hiroya Ohta ,  Norio Saitou

    发明人： Hidetoshi Satoh ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hiroya Ohta ,  Norio Saitou

    IPC分类号： G03F7/20 ,  H01J37/304 ,  G03F9/00

    CPC分类号： G03F7/70616 ,  G03F7/70433 ,  G03F7/70458 ,  G03F7/70633 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

    摘要： In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data. Then, the correction data are stored. When an exposure is performed by the electron beam drawing apparatus with the pattern exposed by the stepper as a reference, the correction data for the two apparatuses are transferred to the electron beam drawing apparatus, the two data are added to detected mark positions, and at positions after the addition, pattern position shifts within a wafer surface are determined. At the time of exposure, the exposure is performed at positions obtained by subtracting the correction data from the determined pattern position shifts. This method makes it possible to correct both position shift errors within the wafer surface due to the stepper and position shift errors due to the electron beam drawing apparatus, thus allowing the alignment accuracy to be enhanced. Also, this result makes it possible to enhance yield for products in the fabricating process.