发明授权
US06556481B1 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
有权
3步写操作非易失性半导体单晶体管，非型闪存EEPROM存储单元
- 专利标题： 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
- 专利标题（中）： 3步写操作非易失性半导体单晶体管，非型闪存EEPROM存储单元
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申请号： US09852247申请日： 2001-05-09
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公开(公告)号： US06556481B1公开(公告)日： 2003-04-29
- 发明人: Fu-Chang Hsu , Hsing-Ya Tsao , Peter W. Lee , Mervyn Wong
- 申请人： Fu-Chang Hsu , Hsing-Ya Tsao , Peter W. Lee , Mervyn Wong
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
In the present invention a three step write of a nonvolatile single transistor cell is disclosed. The three steps comprise erasing, reverse programming and programming which can be applied to a plurality of cell types to produce a symmetrical design and allowing shrinkage of the cell beyond that which is possible with other cells designed to use a two step write procedure. The methodology can be applied to either N-channel or P-channel devices and can be used on various type memory cells such as “ETOX”, “NOR” type, “AND” type, and “OR” type. Erasing and programming steps increase the Vt of the cell transistor, whereas reverse programming decreases the Vt of the cell transistor. Over-erase problems are eliminated using the three step write procedure.
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