An exposure method forms, in a shot area on a reticle, marks to measure arrangement errors that may occur between adjacent device patterns, transfers the marks from the reticle onto a wafer through exposure and development processes using an exposure system, measures arrangement errors according to the marks on the wafer, calculates four error components from the measured arrangement errors, and corrects the exposure system according to the calculated error components. This method eliminates superposition errors from the next exposure process, thereby effectively using the shot areas of exposure systems.