- 专利标题: Method for manufacturing semiconductor wafer having resist mask with measurement marks for measuring the accuracy of overlay of a photomask
-
申请号: US10061332申请日: 2002-02-04
-
公开(公告)号: US06559063B2公开(公告)日: 2003-05-06
- 发明人: Akiyuki Minami , Satoshi Machida
- 申请人: Akiyuki Minami , Satoshi Machida
- 优先权: JP10-362716 19981221
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.