A resonator mirror with a saturable absorber for a laser wavelength &lgr;L formed of a series of layers of a plurality of semiconductor layers on a substrate, wherein a Bragg reflector formed of a plurality of alternately arranged layers comprising a first material with an index of refraction nH and a second material with a lower index of refraction NL compared with the latter is grown on a surface of the substrate. It is characterized in that a threefold layer is grown on the Bragg reflector, wherein a single quantum layer is embedded within two layers outside an intensity minimum for the laser radiation &lgr;L and the threefold layer has a combined optical thickness of λ L 2 .