发明授权
- 专利标题： Method for the formation of copper wiring films
- 专利标题（中）： 形成铜布线膜的方法
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申请号： US09987940申请日： 2001-11-16
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公开(公告)号： US06562219B2公开(公告)日： 2003-05-13
- 发明人: Akiko Kobayashi , Atsushi Sekiguchi , Tomoaki Koide , Minjuan Zhang , Hideki Sunayama , Shiqin Xiao , Kaoru Suzuki
- 申请人： Akiko Kobayashi , Atsushi Sekiguchi , Tomoaki Koide , Minjuan Zhang , Hideki Sunayama , Shiqin Xiao , Kaoru Suzuki
- 优先权： JP2001-013621 20010122
- 主分类号： C23C2802
- IPC分类号： C23C2802
摘要：
A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.
公开/授权文献
- US20020134686A1 Method for the formation of copper wiring films 公开/授权日：2002-09-26
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