公开(公告)号：US06562219B2

公开(公告)日：2003-05-13

申请号：US09987940

申请日：2001-11-16

申请人： Akiko Kobayashi ,  Atsushi Sekiguchi ,  Tomoaki Koide ,  Minjuan Zhang ,  Hideki Sunayama ,  Shiqin Xiao ,  Kaoru Suzuki

发明人： Akiko Kobayashi ,  Atsushi Sekiguchi ,  Tomoaki Koide ,  Minjuan Zhang ,  Hideki Sunayama ,  Shiqin Xiao ,  Kaoru Suzuki

IPC分类号： C23C2802

CPC分类号： H01L21/76843 ,  C23C26/00 ,  C23C28/322 ,  C23C28/34 ,  C23C28/36 ,  C25D7/123 ,  H01L21/76864 ,  H01L21/76873

摘要： A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode.

摘要翻译： 形成铜布线膜的方法包括以下步骤：通过CVD方法在扩散阻挡膜上形成第一铜膜，该扩散阻挡膜已经形成在半导体衬底上并且已经建立了凹陷; 将第一铜膜加热至200〜500℃的温度范围。 并且随后通过使用第一铜膜作为电极的镀覆方法在第一铜膜上形成第二铜膜。

公开(公告)号：US06726954B2

公开(公告)日：2004-04-27

申请号：US09874066

申请日：2001-06-06

申请人： Minjuan Zhang ,  Akiko Kobayashi ,  Toshiaki Sasaki ,  Susumu Akiyama ,  Atsushi Sekiguchi

发明人： Minjuan Zhang ,  Akiko Kobayashi ,  Toshiaki Sasaki ,  Susumu Akiyama ,  Atsushi Sekiguchi

IPC分类号： C23C1618

CPC分类号： C23C16/45523 ,  C23C16/18 ,  C23C16/4402 ,  H01L21/28556

摘要： In a method and a system for forming a copper thin film in which a raw material gas is introduced into a substrate processing chamber storing a substrate and being under a reduced pressure to form a copper thin film on the substrate, an addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued. Alternatively, an addition gas is introduced into the substrate processing chamber before the start of the deposition process, and the addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued.

摘要翻译： 在形成铜薄膜的方法和系统中，其中原料气体被引入存储基板并在减压下的基板处理室中，以在基板上形成铜薄膜，将加成气体引入 基板处理室除了在沉积的初始阶段的原料气体之外。 此后，停止引入加料气体，同时继续引入原料气体。 或者，在开始沉积处理之前，将添加气体引入到基板处理室中，并且在沉积的初始阶段除了原料气体之外还将添加气体引入基板处理室。 此后，停止引入加料气体，同时继续引入原料气体。

公开(公告)号：US5993679A

公开(公告)日：1999-11-30

申请号：US72559

申请日：1998-05-05

申请人： Tomoaki Koide ,  Akiko Kobayashi ,  Ko Sang Tae ,  Atsushi Sekiguchi ,  Osamu Okada

发明人： Tomoaki Koide ,  Akiko Kobayashi ,  Ko Sang Tae ,  Atsushi Sekiguchi ,  Osamu Okada

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23G5/00 ,  C23F1/02

CPC分类号： C23C16/45572 ,  C23C16/4405 ,  C23C16/4557 ,  C23G5/00

摘要： A method of cleaning metallic films built up within a thin film deposition apparatus is disclosed. The method includes an oxidation step to oxidize the metallic film and produce a film of the oxide thereof, a complexing step to complex the oxide film and produce a complex thereof, and a sublimation step to sublimate the complex. The conditions of these cleaning steps are set so that the oxidation step is the rate-determining step.

摘要翻译： 公开了一种清洗在薄膜沉积设备内构建的金属膜的方法。 该方法包括氧化步骤以氧化金属膜并产生其氧化物的膜，使复合氧化膜并产生其复合物的络合步骤和升华步骤使复合物升华。 这些清洗步骤的条件被设定为氧化步骤是速率确定步骤。

公开(公告)号：US06887522B2

公开(公告)日：2005-05-03

申请号：US10132427

申请日：2002-04-26

申请人： Atsushi Sekiguchi ,  Masami Shibagaki ,  Tomoaki Koide ,  Takafumi Kuninobu ,  Kaoru Suzuki

发明人： Atsushi Sekiguchi ,  Masami Shibagaki ,  Tomoaki Koide ,  Takafumi Kuninobu ,  Kaoru Suzuki

IPC分类号： C25D5/34 ,  C23C16/18 ,  C23C28/02 ,  C25D7/12 ,  H01L21/28 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768 ,  C23C16/06

CPC分类号： H01L21/76873 ,  C23C28/023 ,  H01L21/28556 ,  H01L21/2885 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

摘要： A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

摘要翻译： 在基板上形成Cu薄膜的方法包括通过CVD工艺在基板的预定表面上形成第一铜膜的Cu-CVD步骤，以及通过电解液在第一铜膜上进一步形成第二铜膜的电镀步骤 使用第一铜膜作为电极的镀铜工艺。 改性步骤通过在Cu-CVD步骤和镀覆步骤之间的活性气氛中曝光来修饰第一铜膜。 从而可以有效地防止在第一铜膜和第二铜膜之间的界面附近形成微细的空隙。

公开(公告)号：US20070115521A1

公开(公告)日：2007-05-24

申请号：US11622868

申请日：2007-01-12

申请人： Kenji UEDA ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

发明人： Kenji UEDA ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

IPC分类号： G03H1/02

CPC分类号： G03H1/26 ,  G02B5/32 ,  G03H1/0236 ,  G03H1/18 ,  G03H1/24 ,  G03H2001/0439 ,  G03H2001/186 ,  G03H2001/2263 ,  G03H2001/2271 ,  G03H2001/263 ,  G03H2001/266 ,  G03H2001/303 ,  G03H2222/16 ,  G03H2223/18 ,  G03H2230/10 ,  G03H2250/34 ,  G03H2250/44 ,  G03H2260/12 ,  G03H2270/23

摘要： The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

公开(公告)号：US06340540B1

公开(公告)日：2002-01-22

申请号：US09606311

申请日：2000-06-29

申请人： Kenji Ueda ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

发明人： Kenji Ueda ,  Tsuyoshi Hotta ,  Yukio Taniguchi ,  Atsushi Sekiguchi ,  Hideyuki Iriyama

IPC分类号： G03H104

CPC分类号： G03H1/26 ,  G02B5/32 ,  G03H1/0236 ,  G03H1/18 ,  G03H1/24 ,  G03H2001/0439 ,  G03H2001/186 ,  G03H2001/2263 ,  G03H2001/2271 ,  G03H2001/263 ,  G03H2001/266 ,  G03H2001/303 ,  G03H2222/16 ,  G03H2223/18 ,  G03H2230/10 ,  G03H2250/34 ,  G03H2250/44 ,  G03H2260/12 ,  G03H2270/23

摘要： The hologram recording sheet according to the invention is made up of a base film and hologram sensitive materials sensitive to different wavelength regions formed therein in a desired pattern, or a film and at least two hologram recording sensitive materials sensitive to different wavelength regions laminated on the film with a transparent plastic spacer layer located therebetween, thereby enabling the required diffraction light wavelengths to be recorded on the required sites without producing unnecessary interference fringes. At least two hologram recording sensitive materials sensitive to different wavelength regions are formed on different sites on a film in dotted or striped configuration, the size of which is up to 200 mm or at least twice as large as the thickness of the sensitive material layers, thereby enabling regions diffracting light of different wavelengths to be formed in the form of independent sets of interference fringes.

摘要翻译： 根据本发明的全息记录片材由基片和全息图敏感材料构成，所述基片和全息图敏感材料以所需图案形成在其中形成的不同波长区域，或薄膜和至少两个对不同波长区域敏感的全息图记录敏感材料， 薄膜具有位于其间的透明塑料间隔层，从而使所需的衍射光波长能够记录在所需位置上，而不产生不必要的干涉条纹。 至少两个对不同波长区域敏感的全息图记录敏感材料形成在薄膜上的不同位置上，点状或条纹形状，其尺寸高达200mm或至少是敏感材料层厚度的两倍， 从而能够以不同的干涉条纹的形式形成衍射不同波长的光的区域。

公开(公告)号：US6080446A

公开(公告)日：2000-06-27

申请号：US63274

申请日：1998-04-21

申请人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

发明人： Ryoki Tobe ,  Yasuaki Tanaka ,  Atsushi Sekiguchi ,  Hitoshi Jimba ,  So Won Kim

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/45561 ,  C23C16/45576 ,  H01L21/28568

摘要： A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, includes the steps of mixing tetrakis(dialkylamino)titanium (TDAAT) and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles; while controlling the flow rates of the TDAAT, added gas, firt and second carrier gases; and depositing a titanium nitride thin film by the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.

摘要翻译： 在加热到规定温度的基板的表面上的反应容器中制造氮化钛薄膜的方法，包括将四（二烷基氨基）钛（TDAAT）和第一载气混合以产生第一混合气体的步骤; 通过第一组喷嘴将第一混合气体进料到反应容器中; 将与四（二烷基氨基）钛反应的添加气体与第二载气混合以产生第二混合气体; 通过第二组喷嘴将第二混合气体进料到反应容器中; 同时控制TDAAT，添加气体，细丝和第二载气的流速; 以及通过第一混合气体和第二混合气体沉积氮化钛薄膜，同时将反应容器内的压力限制在0.1-15Pa的范围内。

公开(公告)号：US5672385A

公开(公告)日：1997-09-30

申请号：US611678

申请日：1996-03-06

申请人： Hitoshi Jimba ,  So Won Kim ,  Atsushi Sekiguchi

发明人： Hitoshi Jimba ,  So Won Kim ,  Atsushi Sekiguchi

IPC分类号： C01B21/076 ,  C23C16/34 ,  C30B29/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/318 ,  C23C16/18

CPC分类号： C23C16/34

摘要： The present invention provides a method of depositing a titanium nitride thin film with good coverage even in a hole with a high aspect ratio by using tetrakisdialkylaminotitanium. In this method, a raw material gas of tetrakisdialkylaminotitanium is introduced into a reactor through a raw material gas introduction system. When the raw material gas is supplied to a substrate which is previously heated by a holder temperature control mechanism, predetermined thermally chemical reaction takes place to deposit a thin film consisting of titanium nitride as a main component. The pressure in the reactor is controlled by an exhaust system so as to be maintained at a predetermined value in the range of about 0.1 to 15 Pa.

摘要翻译： 本发明提供一种通过使用四烷基氨基钛，即使在具有高纵横比的孔中沉积具有良好覆盖率的氮化钛薄膜的方法。 在该方法中，通过原料气体导入系统将四烷基氨基钛的原料气体引入反应器。 当原料气体被供给到由保持器温度控制机构预先加热的基板时，发生预定的热化学反应以沉积由氮化钛组成的薄膜作为主要成分。 反应器中的压力由排气系统控制，以便保持在约0.1至15Pa的范围内的预定值。

公开(公告)号：US5660954A

公开(公告)日：1997-08-26

申请号：US370179

申请日：1995-01-09

申请人： Kazuhiro Suga ,  Atsushi Sekiguchi ,  Kenji Ueda ,  Hiroyuki Nishimura

发明人： Kazuhiro Suga ,  Atsushi Sekiguchi ,  Kenji Ueda ,  Hiroyuki Nishimura

IPC分类号： G03H1/02 ,  G03H1/18 ,  G03H1/20 ,  G03H1/04 ,  G03H1/00

CPC分类号： G03H1/202 ,  G03H1/0256 ,  G03H1/18 ,  G03H1/0248 ,  G03H1/0252 ,  G03H2223/25 ,  G03H2227/04 ,  G03H2240/55 ,  G03H2250/10 ,  G03H2250/12 ,  G03H2250/32

摘要： A duplicating photosensitive material film is brought into close contact with an ND glass reduced in thickness so as to become flexible or a flexible sheet or an ND glass coated with a cushioning layer through an optical contacting liquid containing a surface active agent. In addition, a spacer is interposed between a hologram original plate and a duplicating photosensitive material, and a space defined by the spacer is filled with an optical contacting liquid, thereby regulating the thickness of the optical contacting liquid layer with the spacer. Therefore, when pressure is applied, the optical contacting liquid is uniformly pressed, so that it can be made uniform and thin in thickness. Accordingly, it is possible to prevent a failure of duplication of a hologram image due to undesirable flow of the optical contacting liquid. In addition, the wettability of the optical contacting liquid improves, so that it is possible to prevent trapping of air and foaming and to make the optical contacting liquid uniform and thin in thickness. Thus, it becomes possible to duplicate a hologram image excellently. In addition, a cushioning layer is provided on the inner side of an AR coated ND glass or on the upper side of a photosensitive material film, and another cushioning layer is provided on the side of an original plate protecting glass which is closer to the optical contacting liquid or on the lower side of the photosensitive material film. With this arrangement, even if dust enters, it can be effectively held inside the cushioning layers. Thus, it is possible to prevent undesirable flow of the optical contacting liquid and lifting of the film due to dust and hence possible to perform duplication effectively without any hindrance. Also disclosed is a hologram producing apparatus which includes mechanisms for feeding and taking up a duplicating photosensitive material film, and a contacting liquid dropping mechanism. The apparatus further includes a mechanism for nipping an excess of contacting liquid dropped, a mechanism for drying the contacting liquid attached to the exposed duplicating photosensitive material film, a mechanism for positioning the film, etc.

公开(公告)号：US5594280A

公开(公告)日：1997-01-14

申请号：US9446

申请日：1993-01-27

申请人： Atsushi Sekiguchi ,  Tsukasa Kobayashi ,  Shinji Takagi

发明人： Atsushi Sekiguchi ,  Tsukasa Kobayashi ,  Shinji Takagi

IPC分类号： C23C16/20 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C23C16/4557 ,  C23C16/20 ,  C23C16/452 ,  C23C16/45565 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76877

摘要： In an electronic device, an interconnect utilizes a flat substrate and a layer bonded to the substrate. The layer may have a through hole formed therein or be formed from parallel spaced layers. An aluminum or aluminum alloy film having single crystallinity is deposited within the through hole or void step created between parallel spaced layers.

摘要翻译： 在电子设备中，互连使用平坦基板和结合到基板的层。 该层可以具有形成在其中的通孔或者由平行隔开的层形成。 具有单一结晶度的铝或铝合金膜沉积在平行隔开的层之间形成的通孔或空隙台阶内。