发明授权
- 专利标题： Semiconductor device of multi-wiring structure and method of manufacturing the same
- 专利标题（中）： 多层结构的半导体器件及其制造方法
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申请号： US09995602申请日： 2001-11-29
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公开(公告)号： US06563218B2公开(公告)日： 2003-05-13
- 发明人: Noriaki Matsunaga , Yoshiaki Shimooka , Kazuyuki Higashi , Hideki Shibata
- 申请人： Noriaki Matsunaga , Yoshiaki Shimooka , Kazuyuki Higashi , Hideki Shibata
- 优先权： JP2001-298309 20010927
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A plurality of wiring layers are laminated on an LSI chip. Each wiring layer includes an electrode to which is applied a mechanical pressure, a first insulating film formed in a region where it is necessary to have a high mechanical strength and having the electrode formed therein, a second insulating film formed in the same layer as the layer of the first insulating film and formed in a region where a mechanical strength higher than that of the first insulating layer is not required, and a wiring layer formed on the surface of the second insulating film.
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