发明授权
US06563746B2 Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode
有权
用于从低功耗模式进入/退出半导体存储器件的电路以及在低功耗模式下控制内部电路的方法
- 专利标题： Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode
- 专利标题（中）： 用于从低功耗模式进入/退出半导体存储器件的电路以及在低功耗模式下控制内部电路的方法
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申请号： US09820795申请日： 2001-03-30
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公开(公告)号： US06563746B2公开(公告)日： 2003-05-13
- 发明人: Shinya Fujioka , Tomohiro Kawakubo , Koichi Nishimura , Kotoku Sato
- 申请人： Shinya Fujioka , Tomohiro Kawakubo , Koichi Nishimura , Kotoku Sato
- 优先权： JP11-318458 19991109; JP2000-241019 20000809; JP2000-329493 20001027
- 主分类号： G11C700
- IPC分类号： G11C700
摘要：
An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.
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