Invention Grant
- Patent Title: Method of forming a silicon oxide layer
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Application No.: US09885048Application Date: 2001-06-21
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Publication No.: US06566282B2Publication Date: 2003-05-20
- Inventor: Cheng-Chieh Huang , Tse-Wei Liu , Tang Yu
- Applicant: Cheng-Chieh Huang , Tse-Wei Liu , Tang Yu
- Main IPC: H01L21469
- IPC: H01L21469
Abstract:
A silicon oxide layer is formed on a semiconductor wafer by performing a high temperature oxidation (HTO) process using dichlorosilane (SiH2Cl2) and nitrous oxide (N2O), as reacting gases, having a flow rates with a ratio greater than 2:1, respectively. The reacting moles of dichlorosilane to nitrous oxide are in the proportion of 1:2.
Public/Granted literature
- US20020197888A1 Method of forming a silicon oxide layer Public/Granted day:2002-12-26
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