• 专利标题: High frequency semiconductor device housing package and mounting structure for mounting the same
  • 申请号: US10107540
    申请日: 2002-03-26
  • 公开(公告)号: US06566601B2
    公开(公告)日: 2003-05-20
  • 发明人: Maraki Maetani
  • 申请人: Maraki Maetani
  • 优先权: JP2001-089754 20010327
  • 主分类号: H01L2302
  • IPC分类号: H01L2302
High frequency semiconductor device housing package and mounting structure for mounting the same
摘要:
The invention is directed to a high frequency semiconductor device housing package comprising: an insulating substrate having on its top surface a high frequency semiconductor device mounting and housing portion; a plurality of wiring conductors delivered from the mounting and housing portion through the under surface of the insulating substrate, to which an electrode of the high frequency semiconductor device is electrically connected; and a plurality of ball-shaped signal terminals and ball-shaped grounding terminals arranged on the under surface of the insulating substrate and electrically connected to the wiring conductor, the ball-shaped grounding terminals being arranged substantially circularly so as to surround the centered ball-shaped signal terminal. This construction achieves efficient transmission of high-frequency signals because of its excellent high frequency characteristics in the ball-shaped terminals. It also excels in easiness of mass production and mounting accuracy.
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