发明授权
US06567443B2 Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes 有权
AlCalnN激光二极管的自对准,折射率引导,掩埋异质结构的结构和方法

Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes
摘要:
A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. The comparatively large p-contact area allowed by the self-aligned architecture contributes to a lower diode voltage and less heat during continuous wave operation of the laser diode.
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