发明授权
US06567443B2 Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes
有权
AlCalnN激光二极管的自对准,折射率引导,掩埋异质结构的结构和方法
- 专利标题: Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes
- 专利标题(中): AlCalnN激光二极管的自对准,折射率引导,掩埋异质结构的结构和方法
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申请号: US09408415申请日: 1999-09-29
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公开(公告)号: US06567443B2公开(公告)日: 2003-05-20
- 发明人: David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
- 申请人: David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
- 主分类号: H01S500
- IPC分类号: H01S500
摘要:
A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. The comparatively large p-contact area allowed by the self-aligned architecture contributes to a lower diode voltage and less heat during continuous wave operation of the laser diode.
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