- 专利标题: Device and method for manufacturing semiconductor
-
申请号: US10148664申请日: 2002-06-04
-
公开(公告)号: US06569696B2公开(公告)日: 2003-05-27
- 发明人: Osamu Suenaga , Makoto Yamamoto , Naoki Mori , Hiromu Ito , Sadao Kobayashi
- 申请人: Osamu Suenaga , Makoto Yamamoto , Naoki Mori , Hiromu Ito , Sadao Kobayashi
- 优先权: JP2000-305067 20001004
- 主分类号: G01R3126
- IPC分类号: G01R3126
摘要:
A heat exchange section (72) is provided in the middle of a circulation water path (58, 59) connecting between a temperature-controlled water tank (71) and a semiconductor manufacturing apparatus body (4) so as to perform a heat exchange with air of a clean room (3). The heat exchange section (72) is installed near an exit of an air circulation path (32) above a fan-filter unit (34) of the clean room as a temperature stabilized area off an atmosphere of the clean room (3). Additionally, as another method, a temperature of a chemical fluid from a chemical fluid tank (6) is controlled to be a temperature of the air in the clean room by a heat exchange section (61) provided in a location the same as above without using the temperature-controlled water so as to supply the chemical fluid to the semiconductor manufacturing apparatus body (4).
公开/授权文献
- US20020179283A1 Device and method for manufacturing semiconductor 公开/授权日:2002-12-05
信息查询