Metal structure for a phase-change memory device

Invention Grant

US06569705B2 Metal structure for a phase-change memory device 有权

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Patent Title: Metal structure for a phase-change memory device
Application No.: US09745835

Application Date: 2000-12-21
Publication No.: US06569705B2

Publication Date: 2003-05-27
Inventor: Chien Chiang , Jong-Won Lee , Patrick Klersy
Applicant: Chien Chiang , Jong-Won Lee , Patrick Klersy
Main IPC: H01L2100
IPC: H01L2100

Metal structure for a phase-change memory device

Abstract:

The invention relates to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.

Public/Granted literature

US20020080647A1 Metal structure for a phase-change memory device Public/Granted day:2002-06-27

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