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US06569971B2 Polymers for photoresist and photoresist compositions using the same 失效
用于光致抗蚀剂和光致抗蚀剂组合物的聚合物

  • 专利标题： Polymers for photoresist and photoresist compositions using the same
  • 专利标题（中）： 用于光致抗蚀剂和光致抗蚀剂组合物的聚合物
  • 申请号： US09383475
    申请日： 1999-08-26
  • 公开(公告)号： US06569971B2
    公开(公告)日： 2003-05-27
  • 发明人: Chi Hyeong Roh , Jae Chang Jung
  • 申请人： Chi Hyeong Roh , Jae Chang Jung
  • 优先权： KR1998-35029 19980827; KR1998-35291 19980828
  • 主分类号： C08G8500
  • IPC分类号： C08G8500
Polymers for photoresist and photoresist compositions using the same
摘要：
The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF(249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and W is 1 or 2.
摘要（中）：

本发明涉及光致抗蚀剂单体，由其形成的聚合物和适用于使用DUV光源如KrF（249nm）和ArF（193nm））的光刻工艺的光致抗蚀剂组合物; EUV; VUV; 电子束 离子束 和X光片。 本发明的光致抗蚀剂单体由以下化学式1表示：其中m为1或2.本发明的聚合物包含衍生自化学式1的共聚单体的重复单元，优选与以下化学式2的单体一起 其中，R *为酸不稳定基团，W为1或2。

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