发明授权
- 专利标题： Field emission electron source and fabrication process thereof
- 专利标题（中）： 场发射电子源及其制造工艺
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申请号： US09339226申请日： 1999-06-24
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公开(公告)号： US06570305B1公开(公告)日： 2003-05-27
- 发明人: Masao Urayama , Keiichiro Uda , Seiki Yano , Yoshio Inoue
- 申请人： Masao Urayama , Keiichiro Uda , Seiki Yano , Yoshio Inoue
- 优先权： JP10-184016 19980630
- 主分类号： H01J102
- IPC分类号： H01J102
摘要：
A silicon substrate is used as the substrate, on which a conical projection is formed as a cathode. A gate electrode is arranged via an insulating film formed on the substrate. The gate electrode is formed so as to enclose and encircle the cathode while the pointed portion of the cathode and the surface of the gate electrode are coated with two layered coating films.
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