公开(公告)号：US06570305B1

公开(公告)日：2003-05-27

申请号：US09339226

申请日：1999-06-24

申请人： Masao Urayama ,  Keiichiro Uda ,  Seiki Yano ,  Yoshio Inoue

发明人： Masao Urayama ,  Keiichiro Uda ,  Seiki Yano ,  Yoshio Inoue

IPC分类号： H01J102

CPC分类号： H01J3/022 ,  H01J1/3044

摘要： A silicon substrate is used as the substrate, on which a conical projection is formed as a cathode. A gate electrode is arranged via an insulating film formed on the substrate. The gate electrode is formed so as to enclose and encircle the cathode while the pointed portion of the cathode and the surface of the gate electrode are coated with two layered coating films.

摘要翻译： 使用硅衬底作为衬底，其上形成有圆锥形突起作为阴极。 栅极通过形成在基板上的绝缘膜布置。 栅电极形成为围绕阴极，阴极的尖部和栅电极的表面涂覆有两层涂膜。

公开(公告)号：US5312774A

公开(公告)日：1994-05-17

申请号：US983438

申请日：1992-12-03

申请人： Kazuyo Nakamura ,  Keiichiro Uda ,  Osamu Yamazaki ,  Hiromi Hattori ,  Nobutaka Fukushima ,  Shigeo Onishi

发明人： Kazuyo Nakamura ,  Keiichiro Uda ,  Osamu Yamazaki ,  Hiromi Hattori ,  Nobutaka Fukushima ,  Shigeo Onishi

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76867 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76877

摘要： A method for manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a material gas containing an organic titanium compound of the formula (I) ##STR1## wherein R is a hydrogen atom, a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas.

摘要翻译： 一种半导体器件的制造方法，包括通过CVD法形成钛或钛化合物膜，所述CVD法使用含有式（I）的有机钛化合物（I）的原料气体，其中R是氢原子，低级 烷基，C8-13缩合多环烃基或被低级烷基和/或芳基取代的甲硅烷基和还原气体。