发明授权
US06570787B1 Programming with floating source for low power, low leakage and high density flash memory devices
有权
使用浮动源编程，实现低功耗，低泄漏和高密度闪存设备
- 专利标题： Programming with floating source for low power, low leakage and high density flash memory devices
- 专利标题（中）： 使用浮动源编程，实现低功耗，低泄漏和高密度闪存设备
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申请号： US10126330申请日： 2002-04-19
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公开(公告)号： US06570787B1公开(公告)日： 2003-05-27
- 发明人: Zhigang Wang , Nian Yang , Xin Guo
- 申请人： Zhigang Wang , Nian Yang , Xin Guo
- 主分类号： G11C1604
- IPC分类号： G11C1604
摘要：
The present invention relates to a flash memory array architecture comprising a plurality of flash memory cells arranged in a NOR type array configuration. Each of the plurality of flash memory cells have a source terminal coupled together to form a common source. The array architecture further comprises a common source selection component coupled between the common source of the array and a predetermined potential. The common source selection component is operable to couple the common source to the predetermined potential in a first state and electrically isolate or float the common source from the predetermined potential in a second state, thereby reducing leakage of non-selected cells associated with the activated bit line during a program mode of operation.
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