• 专利标题: Semiconductor memory device capable of adjusting phase of output data and memory system using the same
  • 申请号: US09973886
    申请日: 2001-10-11
  • 公开(公告)号: US06570815B2
    公开(公告)日: 2003-05-27
  • 发明人: Yasuhiro Kashiwazaki
  • 申请人: Yasuhiro Kashiwazaki
  • 优先权: JP2001-127781 20010425
  • 主分类号: G11C800
  • IPC分类号: G11C800
Semiconductor memory device capable of adjusting phase of output data and memory system using the same
摘要:
In a DLL circuit of a DDR SDRAM, in addition to a replica buffer for compensating delay in an output buffer, a replica buffer for compensating flight time is provided. The phase of a clock signal CLKP outputted to the outside so as to be locked with a clock signal BUFFCLK can be adjusted in accordance with a control signal b[1:0]. For a controller receiving data in a lump from a plurality of semiconductor memory devices, the arriving timings of data from the semiconductor memory devices can be aligned. Therefore, it is unnecessary to capture data in response to a data strobe signal DQS, so that burden on the controller is lessened.
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