- 专利标题: GaN related compound semiconductor and process for producing the same
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申请号: US10053570申请日: 2002-01-24
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公开(公告)号: US06573117B2公开(公告)日: 2003-06-03
- 发明人: Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
- 申请人: Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Masanori Murakami , Yasuo Koide , Jun Ito
- 优先权: JP8-334956 19961129; JP9-019748 19970117; JP9-047064 19970214
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
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