发明授权
- 专利标题： Reduced dark current pin photo diodes using intentional doping
- 专利标题（中）： 使用有意义的掺杂减少暗电流引脚光电二极管
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申请号： US09762487申请日： 2001-02-07
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公开(公告)号： US06573581B1公开(公告)日： 2003-06-03
- 发明人: Allan Richard Sugg , Michael John Lange , Martin Harris Ettenberg
- 申请人： Allan Richard Sugg , Michael John Lange , Martin Harris Ettenberg
- 主分类号： H01L2978
- IPC分类号： H01L2978
摘要：
In a semiconductor p-i-n photodiode an undoped absorption region (10) is epitaxially grown between two highly doped regions (14, 16). In prior art lattice matched InGaAs p-i-n photodiodes current epitaxial structures use low InP cap (16) doping (n˜2.5−6×1016/cm3), and nominally undoped (not intentionally doped, n˜1×1013−5×1014/cm3) InGaAs absorption regions (10). The shunt resistances of p-i-n photodiodes according to the present invention with intentional doping between n˜5×1017/cm3 and 1×1014/cm3, in the InGaAs absorption region (52, 60) are significantly increased over that of a standard structure (non-intentionally doped).
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