发明授权
US06576385B2 Method of varying stepper exposure dose to compensate for across-wafer variations in photoresist thickness
失效
改变步进曝光剂量以补偿光致抗蚀剂厚度的跨晶片变化的方法
- 专利标题: Method of varying stepper exposure dose to compensate for across-wafer variations in photoresist thickness
- 专利标题(中): 改变步进曝光剂量以补偿光致抗蚀剂厚度的跨晶片变化的方法
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申请号: US09776206申请日: 2001-02-02
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公开(公告)号: US06576385B2公开(公告)日: 2003-06-10
- 发明人: Christopher A. Bode , Joyce S. Oey Hewett , Alexander J. Pasadyn
- 申请人: Christopher A. Bode , Joyce S. Oey Hewett , Alexander J. Pasadyn
- 主分类号: G03F900
- IPC分类号: G03F900
摘要:
A method of compensating for across-wafer variations in photoresist thickness is provided. The method comprises providing a wafer having a process layer formed there-above, forming a layer of photoresist above the process layer, measuring a thickness of the layer of photoresist at a plurality of locations to result in a plurality of thickness measurements, providing the thickness measurements to a controller that determines, based upon the thickness measurements, an exposure dose of an exposure process to be performed on the layer of photoresist, and performing the exposure process on the layer of photoresist using the determined exposure dose. This exposure dose may be varied on a flash-by-flash basis as the stepper tool “steps” across the surface of wafers. That is, the exposure dose for a group of flashes, or for each flash, may be varied in response to the thickness measurements.