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公开(公告)号：US07120514B1
公开(公告)日：2006-10-10
申请号：US09815446
申请日：2001-03-22
CPC分类号： G03F9/7034 , G03F7/70633
摘要： The present invention provides for a method and an apparatus for performing field-to-field compensation during semiconductor manufacturing. At least one semiconductor device is processed. Metrology data is collected from the processed semiconductor device. A field-to-field metrology analysis is performed based upon the metrology data. Residual-error analysis is performed based upon the field-to-field analysis.
摘要翻译： 本发明提供一种用于在半导体制造期间执行场到场补偿的方法和装置。 至少一个半导体器件被处理。 从被处理的半导体器件收集测量数据。 基于测量数据进行现场测量分析。 基于现场分析进行残差分析。
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2.发明授权Method and apparatus for initializing tool controllers based on tool event data 有权基于工具事件数据初始化刀具控制器的方法和装置公开(公告)号：US07103439B1
公开(公告)日：2006-09-05
申请号：US09824301
申请日：2001-04-02
申请人： Christopher A. Bode , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Christopher A. Bode , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , Y02P90/20 , Y02P90/86
摘要： A method for initializing process controllers based on tool event data includes providing a tool having a process controller adapted to employ a control model to control an operating recipe of the tool; receiving a tool event notification; and initializing the control model in response to receiving the tool event notification. A manufacturing system includes a tool and a process controller. The tool is adapted to process wafers in accordance with an operating recipe. The process controller is adapted to employ a control model to control the operating recipe in accordance with a control algorithm. The process controller is further adapted to receive a tool event notification and initialize the control model in response to receiving the tool event notification.
摘要翻译： 用于基于工具事件数据初始化过程控制器的方法包括提供具有适于使用控制模型来控制工具的操作配方的过程控制器的工具; 接收工具事件通知; 并且响应于接收到工具事件通知来初始化控制模型。 制造系统包括工具和过程控制器。 该工具适于根据操作配方处理晶片。 过程控制器适于采用控制模型来根据控制算法来控制操作配方。 过程控制器还适于接收工具事件通知并响应于接收到工具事件通知而初始化控制模型。
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3.发明授权公开(公告)号：US06901340B1
公开(公告)日：2005-05-31
申请号：US09824348
申请日：2001-04-02
申请人： Alexander J. Pasadyn , Joyce S. Oey Hewett , Christopher A. Bode , Anthony J. Toprac , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Alexander J. Pasadyn , Joyce S. Oey Hewett , Christopher A. Bode , Anthony J. Toprac , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
CPC分类号： G05B23/0275 , G05B2219/1112 , G05B2219/34477 , G05B2223/02 , H01L21/67276 , Y02P90/86
摘要： A method for distinguishing between sources of process variation includes processing a plurality of manufactured items in a process flow; storing a set of production environment data associated with each of the manufactured items; identifying manufactured items associated with a process drift; generating a plurality of characteristic threads based on the production environment data; comparing the characteristic threads for at least those manufactured items associated with the process drift; and determining at least one potential cause for the process drift based on the comparison of the characteristic threads. A manufacturing system for distinguishing between sources of process variation is also provided. The manufacturing system includes a plurality of tools for processing manufactured items in a process flow, a database server, and a drift monitor.
摘要翻译： 用于区分过程变化源的方法包括在处理流程中处理多个制造项目; 存储与每个所制造的项目相关联的一组生产环境数据; 识别与过程漂移相关联的制品; 基于生产环境数据生成多个特征线程; 比较至少那些与过程漂移有关的制造物品的特征线; 以及基于所述特征线程的比较来确定所述过程漂移的至少一个潜在原因。 还提供了用于区分过程变化源的制造系统。 制造系统包括用于处理流程中的制造物品的多个工具，数据库服务器和漂移监视器。
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4.发明授权Method of controlling the duration of an endpoint polishing process in a multistage polishing process 失效控制多级抛光工艺中终点抛光工艺持续时间的方法公开(公告)号：US06746958B1
公开(公告)日：2004-06-08
申请号：US09817536
申请日：2001-03-26
IPC分类号： H01L214763
CPC分类号： B24B37/013 , B24B37/042 , H01L21/7684
摘要： The present invention is directed to a method of controlling chemical mechanical polishing operations to control the duration of an endpoint polishing process. The method comprises providing a wafer having a layer of copper formed thereabove, performing a first timed polishing operation for a duration (t1) on the layer of copper at a first platen to remove a majority of the layer of copper, performing an endpoint polishing operation on the layer of copper at a second platen to remove substantially all of the layer of copper, determining a duration (t2ept) of the endpoint polishing operation performed on the layer of copper at the second platen, and determining, based upon a comparison between the determined duration (t2ept) of the endpoint polishing operation and a target value for the duration of the endpoint polishing operations, a duration (t1) of the timed polishing operation to be performed on a subsequently processed layer of copper at the first platen. In another embodiment, the invention further comprises modifying, based upon a variance between the determined duration (t2ept) of the endpoint polishing operation and a target value for the duration (t2ept) of the endpoint polishing operation, the duration (t1) of the timed polishing operation to be performed on a subsequently processed layer of copper at the first platen.
摘要翻译： 本发明涉及一种控制化学机械抛光操作以控制端点抛光工艺的持续时间的方法。 该方法包括提供具有形成在其上的铜层的晶片，在第一压板上在铜层上执行持续时间（t1）的第一定时抛光操作以去除大部分铜层，执行端点抛光操作 在第二压板上的铜层上去除基本上所有的铜层，确定在第二压板上对铜层执行的端点抛光操作的持续时间（t2
），并且基于 在终点抛光操作的确定的持续时间（t2 ）与终点抛光操作的持续时间的目标值之间进行比较，对后续处理的铜层执行的定时抛光操作的持续时间（t1） 第一个压板。 在另一个实施例中，本发明还包括基于端点抛光操作的所确定的持续时间（t2 ）与端点抛光操作的持续时间（t2 ）的目标值之间的差异来修改，持续时间 （t1）对在第一压板上的后续处理的铜层进行的定时抛光操作。 -
5.发明授权Method and apparatus for updating control state variables of a process control model based on rework data 有权基于返工数据更新过程控制模型的控制状态变量的方法和装置公开(公告)号：US06970757B1
公开(公告)日：2005-11-29
申请号：US09838467
申请日：2001-04-19
申请人： Joyce S. Oey Hewett , Anthony J. Toprac , Christopher A. Bode , Alexander J. Pasadyn , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Joyce S. Oey Hewett , Anthony J. Toprac , Christopher A. Bode , Alexander J. Pasadyn , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32179 , G05B2219/32228 , G05B2219/45031 , Y02P90/22 , Y02P90/86
摘要： A method for controlling a manufacturing process includes processing a plurality of workpieces in a tool; monitoring a rework rate associated with the workpieces processed in the tool; and initiating an automatic corrective action in response to the rework rate being greater than a predetermined threshold. A manufacturing system includes a tool adapted to process a plurality of workpieces and a rework controller adapted to monitor a rework rate associated with the workpieces processed in the tool and initiate an automatic corrective action in response to the rework rate being greater than a predetermined threshold.
摘要翻译： 一种用于控制制造过程的方法包括在工具中处理多个工件; 监测与工具中处理的工件相关联的返工率; 以及响应于所述返工率大于预定阈值而启动自动校正动作。 制造系统包括适于处理多个工件的工具和适于监测与工具中处理的工件相关联的返工率的返工控制器，并响应于返工率大于预定阈值而启动自动校正动作。
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6.发明授权Method and apparatus for controlling process target values based on manufacturing metrics 失效基于制造指标控制过程目标值的方法和装置公开(公告)号：US06937914B1
公开(公告)日：2005-08-30
申请号：US09789872
申请日：2001-02-21
申请人： Christopher A. Bode , Thomas J. Sonderman , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Michael L. Miller
发明人： Christopher A. Bode , Thomas J. Sonderman , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Michael L. Miller
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32063 , G05B2219/45031 , Y02P90/20 , Y02P90/86
摘要： A method for controlling a tool adapted to process workpieces in accordance with an operating recipe based on a process target value is provided. The method includes collecting manufacturing characteristic data associated with the workpieces; correlating the manufacturing characteristic data with a first manufacturing metric to generate a first manufacturing metric distribution for the workpieces; and adjusting the process target value based on the first manufacturing metric distribution. A manufacturing system includes a processing tool and a target monitor. The processing tool is adapted to process workpieces in accordance with an operating recipe based on a process target value. The target monitor is adapted to collect manufacturing characteristic data associated with the workpieces, correlate the manufacturing characteristic data with a first manufacturing metric to generate a first manufacturing metric distribution for the workpieces, and adjust the process target value based on the first manufacturing metric distribution.
摘要翻译： 提供了一种用于控制适于根据基于过程目标值的操作配方来处理工件的工具的方法。 该方法包括收集与工件相关联的制造特性数据; 将所述制造特征数据与第一制造度量相关联，以产生所述工件的第一制造度量分布; 以及基于所述第一制造度量分布来调整所述过程目标值。 制造系统包括处理工具和目标监视器。 处理工具适于根据基于过程目标值的操作配方来处理工件。 目标监视器适于收集与工件相关联的制造特性数据，将制造特性数据与第一制造度量相关联，以产生工件的第一制造度量分布，并且基于第一制造度量分布来调整过程目标值。
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7.发明授权公开(公告)号：US06615098B1
公开(公告)日：2003-09-02
申请号：US09789871
申请日：2001-02-21
申请人： Christopher A. Bode , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Christopher A. Bode , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G06F1760
CPC分类号： G05B19/41865 , G05B19/0426 , G05B2219/32129 , G05B2219/36225 , G05B2219/45031 , Y02P90/20
摘要： A method for controlling a manufacturing system includes processing workpieces in a plurality of tools; initiating a baseline control script for a selected tool of the plurality of tools; providing context information for the baseline control script; determining a tool type based on the context information; selecting a control routine for the selected tool based on the tool type; and executing the control routine to generate a control action for the selected tool. A manufacturing system includes a plurality of tools adapted to process workpieces, a control execution manager, and a control executor. The control execution manager is adapted to initiate a baseline control script for a selected tool of the plurality of tools and provide context information for the baseline control script. The control executor is adapted to execute the baseline control script, determine a tool type based on the context information, select a control routine for the selected tool based on the tool type, and execute the control routine to generate a control action for the selected tool.
摘要翻译： 一种用于控制制造系统的方法包括：处理多个工具中的工件; 为所述多个工具的所选择的工具启动基线控制脚本; 提供基线控制脚本的上下文信息; 基于上下文信息确定工具类型; 根据刀具类型选择所选刀具的控制程序; 以及执行所述控制程序以产生所选择的工具的控制动作。 制造系统包括适于处理工件的多个工具，控制执行管理器和控制执行器。 所述控制执行管理器适于启动用于所述多个工具的所选工具的基线控制脚本并提供所述基线控制脚本的上下文信息。 控制执行器适于执行基线控制脚本，基于上下文信息确定工具类型，基于工具类型选择所选刀具的控制程序，并执行控制程序以生成所选刀具的控制动作 。
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8.发明授权Automated method of controlling photoresist develop time to control critical dimensions, and system for accomplishing same 有权控制光刻胶的自动化方法开发时间来控制关键尺寸，并实现相同的系统公开(公告)号：US06569692B1
公开(公告)日：2003-05-27
申请号：US09776087
申请日：2001-02-02
IPC分类号： G01R3126
CPC分类号： G03F7/0035 , G03F7/3021 , Y10S438/942
摘要： The present invention is directed to an automated method of controlling photoresist develop time to control critical dimensions, and a system for accomplishing same. In one embodiment, the method comprises measuring a critical dimension of each of a plurality of features formed in a layer of photoresist, providing the measured critical dimensions of the features, in the layer of photoresist to a controller that determines, based upon the measured critical dimensions, a duration of a photoresist develop process to be performed on a layer of photoresist formed above a subsequently processed wafer, and performing a photoresist develop process on the subsequently processed wafer for the determined duration.
摘要翻译： 本发明涉及控制光刻胶显影时间以控制关键尺寸的自动化方法，以及用于实现其的系统。 在一个实施例中，该方法包括测量在光致抗蚀剂层中形成的多个特征中的每一个的临界尺寸，将光刻胶层中的特征的测量临界尺寸提供给控制器，所述控制器基于所测量的临界值 尺寸，光致抗蚀剂的持续时间将在随后处理的晶片上形成的光致抗蚀剂层上进行，并对所确定的持续时间在随后处理的晶片上进行光刻胶显影处理。
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9.发明授权Automated variation of stepper exposure dose based upon across wafer variations in device characteristics, and system for accomplishing same 失效基于设备特性的晶片变化的步进曝光剂量的自动变化，以及用于实现其的系统公开(公告)号：US06784001B2
公开(公告)日：2004-08-31
申请号：US10094117
申请日：2002-03-08
IPC分类号： H01L2166
CPC分类号： G03F7/70483 , H01L22/20
摘要： A novel method and system for fabricating integrated circuit devices is disclosed herein. In one embodiment, the method comprises determining at least one electrical performance characteristic of a plurality of semiconductor devices formed above at least one semiconducting substrate, providing the determined electrical performance characteristics to a controller that determines, based upon the determined electrical characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on at least one subsequently processed substrate, and performing the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates. The system comprises a metrology tool for determining an electrical performance characteristic of a plurality of semiconductor devices formed above at least one substrate, a controller that determines, based upon the determined electrical performance characteristics, across-substrate variations in an exposure dose of a stepper exposure process to be performed on subsequently processed substrates, and a stepper tool that performs the stepper exposure process comprised of the across-substrate variations in exposure dose on the subsequently processed substrates.
摘要翻译： 本文公开了一种用于制造集成电路器件的新颖方法和系统。 在一个实施例中，该方法包括确定在至少一个半导体衬底上方形成的多个半导体器件的至少一个电性能特性，将确定的电性能特性提供给控制器，该控制器基于确定的电特性来确定跨衬底 将对至少一个随后处理的基板进行步进曝光处理的曝光剂量的变化，以及对随后处理的基板上的曝光剂量的跨基板变化进行步进曝光处理。 该系统包括用于确定在至少一个衬底上形成的多个半导体器件的电性能特征的计量工具，控制器，其基于确定的电性能特性确定步进曝光的曝光剂量中的跨衬底变化 在后续处理的基板上执行的处理以及执行步进曝光处理的步进工具，其包括曝光剂量对随后处理的基板的跨基板变化。
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10.发明授权Automated method of controlling critical dimensions of features by controlling stepper exposure dose, and system for accomplishing same 有权通过控制步进曝光剂量控制特征的关键尺寸的自动化方法，以及完成相同的系统公开(公告)号：US06632692B1
公开(公告)日：2003-10-14
申请号：US09758765
申请日：2001-01-11
IPC分类号： H01L2166
CPC分类号： G03F7/70558 , G03F7/70625
摘要： The present invention is directed to an automated method of controlling critical dimensions of features by controlling the stepper exposure dose, and a system for accomplishing same. In one embodiment, the method comprises measuring a critical dimension (FICD) of a plurality of features formed in a process layer, and providing the measured critical dimensions of the features to a controller that determines, based upon the measured critical dimensions, an exposure dose of an exposure process to be performed on at least one subsequently processed wafer. In another embodiment, the method comprises measuring a critical dimension (DICD) of a plurality of features formed in a patterned layer of photoresist, providing the measured critical dimensions of the features in the patterned layer of photoresist to a controller that determines, based upon the measured critical dimensions, an exposure dose of an exposure process to be performed on at least one subsequently processed wafer. In some embodiments, both the FICD measurements and the DICD measurements are used to determine the exposure dose.
摘要翻译： 本发明涉及通过控制步进曝光剂量来控制特征的关键尺寸的自动化方法，以及用于实现其的系统。 在一个实施例中，该方法包括测量在处理层中形成的多个特征的临界尺寸（FICD），以及将特征的测量临界尺寸提供给控制器，所述控制器基于所测量的临界尺寸确定曝光剂量 在至少一个随后处理的晶片上进行曝光处理。 在另一个实施例中，该方法包括测量在光致抗蚀剂的图案化层中形成的多个特征的临界尺寸（DICD），将光刻胶图案化层中的特征的测量临界尺寸提供给控制器，该控制器基于 测量的临界尺寸，对至少一个随后处理的晶片进行曝光处理的曝光剂量。 在一些实施例中，FICD测量和DICD测量都用于确定曝光剂量
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