Method of improving astigmatism of a photoresist layer

Invention Grant

US06576407B2 Method of improving astigmatism of a photoresist layer 有权

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Patent Title: Method of improving astigmatism of a photoresist layer
Application No.: US09840996

Application Date: 2001-04-25
Publication No.: US06576407B2

Publication Date: 2003-06-10
Inventor: Shun-Li Lin , Wei-Hua Hsu
Applicant: Shun-Li Lin , Wei-Hua Hsu
Main IPC: G03F720
IPC: G03F720

Method of improving astigmatism of a photoresist layer

Abstract:

A photoresist layer comprising an optically active component is provided, so that after an incident linearly polarized light penetrates the photoresist layer, the intensity ratio of an S wave polarization and a P wave polarization divided from the linearly polarized light is effectively 1:1 so improving astigmatism.

Public/Granted literature

US20020160314A1 Method of improving astigmatism of a photoresist layer Public/Granted day:2002-10-31

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