公开(公告)号：US07683487B2

公开(公告)日：2010-03-23

申请号：US11307006

申请日：2006-01-19

申请人： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

发明人： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

IPC分类号： H01L23/48

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

摘要： A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

摘要翻译： 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光隔离层，抗反射涂层和光刻胶层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US20050148166A1

公开(公告)日：2005-07-07

申请号：US10707632

申请日：2003-12-26

申请人： SHUN-LI LIN ,  YUN CHU LIN ,  WEN CHUNG CHANG ,  CHING YI LEE

发明人： SHUN-LI LIN ,  YUN CHU LIN ,  WEN CHUNG CHANG ,  CHING YI LEE

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

摘要： A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

摘要翻译： 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光学隔离层，抗反射涂层和光致抗蚀剂层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US06563127B2

公开(公告)日：2003-05-13

申请号：US09860420

申请日：2001-05-18

申请人： Shun-Li Lin ,  Tsung-Hsien Wu

发明人： Shun-Li Lin ,  Tsung-Hsien Wu

IPC分类号： G01N2186

CPC分类号： G03F7/70441

摘要： An optical proximity correction method for producing a rectangular contact. The method includes representing the rectangular contact pattern required by an integrated circuit by a pair of connected hammerhead patterns and serif patterns at the inner straight corners of the hammerhead patterns. By varying the width of the connecting section of the hammerhead patterns, an optimal aspect ratio for the rectangular pattern is obtained.

公开(公告)号：US07586609B2

公开(公告)日：2009-09-08

申请号：US11112115

申请日：2005-04-21

申请人： Shun-Li Lin ,  Chen-Fu Chien ,  Chia-Yu Hsu ,  I-Pien Wu

发明人： Shun-Li Lin ,  Chen-Fu Chien ,  Chia-Yu Hsu ,  I-Pien Wu

IPC分类号： G01B11/00

CPC分类号： G03F7/70633 ,  G03F7/705

摘要： A method for analyzing overlay errors in lithography is described. Interfield sampling and intrafield sampling are first conducted to sample multiple positions on each of the wafers, and then the overlay error value at each of the positions is measured. An overlay error model including coefficients of intrafield and interfield overlay errors of different types is used to fit the measured overlay error values with respect to the sampled positions. In the overlay error model, the intrafield overlay errors include intrafield translation, isotropic magnification, reticle rotation, asymmetric magnification and asymmetric rotation, and the interfield overlay errors include interfield translation, scale error, wafer rotation and orthogonality error.

摘要翻译： 描述了用于分析光刻中的重叠误差的方法。 首先进行场间采样和场内采样，以对每个晶片上的多个位置进行采样，然后测量每个位置处的重叠误差值。 使用包括不同类型的场内和场间覆盖误差系数的重叠误差模型来拟合相对于采样位置的测量重叠误差值。 在叠加误差模型中，场内重叠误差包括场内平移，各向同性放大，标线旋转，不对称放大和不对称旋转，场间叠加误差包括场间平移，尺度误差，晶圆旋转和正交误差。

公开(公告)号：US06576407B2

公开(公告)日：2003-06-10

申请号：US09840996

申请日：2001-04-25

申请人： Shun-Li Lin ,  Wei-Hua Hsu

发明人： Shun-Li Lin ,  Wei-Hua Hsu

IPC分类号： G03F720

CPC分类号： G03F7/70566 ,  G03F7/2006

摘要： A photoresist layer comprising an optically active component is provided, so that after an incident linearly polarized light penetrates the photoresist layer, the intensity ratio of an S wave polarization and a P wave polarization divided from the linearly polarized light is effectively 1:1 so improving astigmatism.

公开(公告)号：US07132334B2

公开(公告)日：2006-11-07

申请号：US10668906

申请日：2003-09-23

申请人： Shun Li Lin

发明人： Shun Li Lin

IPC分类号： H01L21/8234

CPC分类号： H01L27/1122 ,  H01L27/112

摘要： A method of code programming a mask read only memory (ROM) is disclosed. A method of the present invention includes forming a layer of developable anti-reflective coating over a plurality of code openings located on a substrate of a ROM device. The plurality of code openings are typically elements of a first code, or pre-code, pattern, and a portion of the developable anti-reflective coating layer is removed or processed to define a second code, or real-code, pattern of the device. The method may be practiced by applying and patterning a layer of photoresist material over the developable anti-reflective coating to form a second code pattern, and then removing portions of the developable anti-reflective coating that remain exposed beneath the patterned photoresist material.

摘要翻译： 公开了一种代码编程掩模只读存储器（ROM）的方法。 本发明的方法包括在位于ROM器件的衬底上的多个代码开口上形成可显影的抗反射涂层层。 多个代码开口通常是第一代码或预代码图案的元件，并且可显影抗反射涂层的一部分被去除或处理以限定该器件的第二代码或实际代码图案 。 该方法可以通过在可显影的抗反射涂层上施加和图案化光致抗蚀剂材料层以形成第二代码图案，然后去除保留在图案化的光致抗蚀剂材料下方的可显影的抗反射涂层的部分来实施。

公开(公告)号：US20060199375A1

公开(公告)日：2006-09-07

申请号：US11307006

申请日：2006-01-19

申请人： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

发明人： Shun-Li Lin ,  Yun-Chu Lin ,  Wen-Chung Chang ,  Ching-Yi Lee

IPC分类号： G03F1/00 ,  H01L21/4763

CPC分类号： H01L21/0276 ,  H01L21/31144 ,  H01L21/76802

摘要： A structure applied to a photolithographic process is provided. The structure includes at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

摘要翻译： 提供了应用于光刻工艺的结构。 该结构至少包括在衬底上顺序形成的膜层，光隔离层，抗反射涂层和光刻胶层。 在光刻工艺中，光隔离层阻止光穿透到膜层。 由于光隔离层被设置在光致抗蚀剂层的下方，因此防止了在曝光期间从光源发出的光在通过膜层之后从基板表面反射。 因此，光刻工艺的临界尺寸不受膜层厚度的任何变化的影响。

公开(公告)号：US06960411B2

公开(公告)日：2005-11-01

申请号：US10314959

申请日：2002-12-10

申请人： Yu-Lin Yen ,  Ching-Yu Chang ,  Shun-Li Lin

发明人： Yu-Lin Yen ,  Ching-Yu Chang ,  Shun-Li Lin

IPC分类号： G03F1/00 ,  G03F1/36 ,  H01L21/762 ,  G03F9/00

CPC分类号： G03F1/36 ,  H01L21/76224

摘要： A mask with extended mask window for forming patterns on a semiconductor substrate. The mask includes a main chip array having four sides for forming patterns of a main chip in a semiconductor substrate and a plurality of extended mask windows arranged around the main chip array. A method of dummy exposure using the mask includes providing a semiconductor substrate comprising a nitride layer with a plurality of main chip areas therein, and a plurality of unpatterned areas therein, forming a resist layer on the semiconductor substrate, providing an exposure mask comprising a main chip array and a plurality of extended mask windows, patterning the main chip areas of the semiconductor substrate using the main chip array of the exposure mask, patterning the unpatterned areas of the semiconductor substrate using the windows of the exposure mask, and removing the unexposed portions of the resist layer.

摘要翻译： 具有用于在半导体衬底上形成图案的扩展掩模窗口的掩模。 掩模包括具有用于形成半导体衬底中的主芯片的图案的四个侧面的主芯片阵列和布置在主芯片阵列周围的多个扩展掩模窗口。 使用掩模的伪曝光方法包括提供包括其中具有多个主芯片区域的氮化物层和其中多个未图案化区域的半导体衬底，在半导体衬底上形成抗蚀剂层，提供包括主体的曝光掩模 芯片阵列和多个扩展掩模窗口，使用曝光掩模的主芯片阵列图案化半导体衬底的主芯片区域，使用曝光掩模的窗口对半导体衬底的未图案化区域进行图案化，以及去除未曝光部分 的抗蚀剂层。

公开(公告)号：US06660458B2

公开(公告)日：2003-12-09

申请号：US09895552

申请日：2001-06-28

申请人： Shun-Li Lin

发明人： Shun-Li Lin

IPC分类号： G03F700

CPC分类号： G03F7/70425 ,  G03F7/70441

摘要： A method of optical proximity correction, suitably applied to a photolithography process with a high numeric aperture. The exposure light comprises a P-polarized light and an S-polarized light perpendicular to the P-polarized light. The P-polarized light has a transmission coefficient larger than that of the S-polarized light. In this method, different optical proximity correction modes are applied to the patterns with different orientations. While correcting any pattern, the ratio of transmission coefficient of the P-polarized light to the S-polarized light and the polarization angle between the pattern orientation and the polarization direction of the P-polarization/S-polarization light are considered.

公开(公告)号：US07157215B2

公开(公告)日：2007-01-02

申请号：US10892751

申请日：2004-07-15

申请人： Shun-Li Lin ,  Wei-Hua Hsu

发明人： Shun-Li Lin ,  Wei-Hua Hsu

IPC分类号： G03F7/20 ,  G03F7/00 ,  G03F7/04

CPC分类号： G03F7/2006

摘要： A photoresist with adjustable polarized light response and a photolithography process using the photoresist. The photoresist and the photolithography process are suitable for use in an exposure optical system with a high numerical aperture. The photoresist includes a photosensitive polymer that can absorb the exposure light source to generate an optical reaction. The photosensitive polymer can also be oriented along a direction of an electric field or a magnetic field. The response for the photosensitive upon a polarized light is determined by an angle between the predetermined direction and the polarized light. In addition, the photolithography process adjusts the orientation of the photosensitive polymer, so that the P-polarized light has a weaker response than that of the S-polarized light to compensate for the larger transmission coefficient of the P-polarized light with a high numerical aperture, so as to prevent the photoresist pattern deformation.

摘要翻译： 具有可调偏振光响应的光致抗蚀剂和使用光致抗蚀剂的光刻工艺。 光致抗蚀剂和光刻工艺适用于具有高数值孔径的曝光光学系统。 光致抗蚀剂包括可以吸收曝光光源以产生光学反应的光敏聚合物。 感光性聚合物也可以沿着电场或磁场的方向取向。 偏振光下的感光度的响应由预定方向和偏振光之间的角度确定。 此外，光刻工艺调整光敏聚合物的取向，使得P偏振光的响应弱于S偏振光，以补偿具有高数值的P偏振光的较大透射系数 孔径，以防止光致抗蚀剂图案变形。