- 专利标题: Methods of forming microstructure devices
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申请号: US09850923申请日: 2001-05-07
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公开(公告)号: US06576489B2公开(公告)日: 2003-06-10
- 发明人: Toi Yue Becky Leung , Jeffrey D. Chinn
- 申请人: Toi Yue Becky Leung , Jeffrey D. Chinn
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.
公开/授权文献
- US20020164879A1 Methods of forming microstructure devices 公开/授权日:2002-11-07
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